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參數(shù)資料
| 型號(hào)： | TF222 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-channel Junction FET Electret Condenser Microphone Applications |
| 中文描述： | N溝道場(chǎng)效應(yīng)管結(jié)電容式麥克風(fēng)的應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 29K |
| 代理商： | TF222 |
TF222
No.7281-1/4
Electret Condenser Microphone Applications
Features
Especially suited for use in electret condenser
microphone.
Ultrasmall package permitting TF222 applied
sets to be made small and slim.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
V
mA
mA
mW
°
C
°
C
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
--20
10
1
100
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
V(BR)GDO
VGS(off)
IDSS
yfs
Ciss
Crss
IG=--100
μ
A
VDS=2V, ID=1
μ
A
VDS=2V, VGS=0
VDS=2V, VGS=0, f=1kHz
VDS=2V, VGS=0, f=1MHz
VDS=2V, VGS=0, f=1MHz
--20
--0.1
140*
0.5
V
V
μ
A
mS
pF
pF
--1.0
350*
5.0
1.1
Continued on next page.
* : The TF222 is classified by IDSS as follows : (unit :
μ
A)
Rank
IDSS
140 to 240
B4
B5
210 to 350
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7281A
TF222
Package Dimensions
unit : mm
2207A
[TF222]
Side View
90503 TS IM / O3002 TS IM TA-3621
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-channel Junction FET
Preliminary
1 : Drain
2 : Source
3 : Gate
SANYO : SSFP
0
0.25
0.2
0
0
1.4
0.45
1
3
2
0
0
1
0
0.1
1
3
2
Top View
Side View
Bottom View
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