參數(shù)資料
型號: TEKT5400S
廠商: VISHAY SEMICONDUCTORS
元件分類: 光敏三極管
英文描述: Phototransistor IR Chip Silicon 920nm 2-Pin
中文描述: Photodetector Transistors 37 Degree 150mW
文件頁數(shù): 1/6頁
文件大?。?/td> 146K
代理商: TEKT5400S
TEKT5400S
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 23-Aug-11
1
Document Number: 81569
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon NPN Phototransistor
DESCRIPTION
TEKT5400S is a silicon NPN phototransistor with high
radiant sensitivity, molded in a plastic package with side
view lens and daylight blocking filter. Filter bandwidth is
matched with 950 nm IR emitters.
FEATURES
Package type: leaded
Package form: side view lens
Dimensions (L x W x H in mm): 5 x 2.65 x 5
High radiant sensitivity
Daylight blocking filter matched with 940 nm
emitters
Fast response times
Angle of half sensitivity:
= ± 37°
Package matched with IR emitter series TSKS5400S
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Detector in electronic control and drive circuits
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
16733
PRODUCT SUMMARY
COMPONENT
TEKT5400S
I
ca
(mA)
4
(deg)
± 37
λ
0.5
(nm)
850 to 980
ORDERING INFORMATION
ORDERING CODE
TEKT5400S
PACKAGING
Bulk
REMARKS
PACKAGE FORM
Side view lens
MOQ: 2000 pcs, 2000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
J-STD-051, soldered on PCB
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
70
7
100
200
150
100
- 40 to + 85
- 40 to + 100
260
270
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
t
p
/T
0.5, t
p
10 ms
T
amb
40 °C
t
5 s
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