參數(shù)資料
型號(hào)： TEA5570
廠商： NXP SEMICONDUCTORS
元件分類： 接收器
英文描述： RF/IF circuit for AM/FM radio
中文描述： AM/FM, AUDIO SINGLE CHIP RECEIVER, PDIP16
封裝： 0.300 INCH, PLASTIC, MO-001AE, SOT-38-1, DIP-16
文件頁(yè)數(shù)： 2/19頁(yè)
文件大小： 180K
代理商： TEA5570
September 1987
2
Philips Semiconductors
Product specification
RF/IF circuit for AM/FM radio
TEA5570
GENERAL DESCRIPTION
The TEA5570 is a monolithic integrated radio circuit for use in portable receivers and clock radios. The IC is also
applicable to mains-fed AM and AM/FM receivers and car radio-receivers. Apart from the AM/FM switch function the IC
incorporates for AM a double balanced mixer, 'one-pin' oscillator, i.f. amplifier with a.g.c. and detector, and a level
detector for tuning indication. The FM circuitry comprises i.f. stages with a symmetrical limiter for a ratio detector. A level
detector for mono/stereo switch information and/or indication complete the FM part.
Features
Simple d.c. switching for AM to FM by only one d.c. contact to ground (no switch contacts in the i.f. channel, a.f. or
level detector outputs)
AM and FM gain control
Low current consumption (I
tot
= 6 mA)
Low voltage operation (V
P
= 2,7 to 9 V)
Ability to handle large AM signals; good i.f. suppression
Applicable for inductive, capacitive and diode tuning
Double smoothing of a.g.c. line
Short-wave range up to 30 MHz
Lumped or distributed i.f. selectivity with coil and/or ceramic filters
AM and a.g.c. output voltage control
Distribution of PCB wiring provides good frequency stability
Economic design for 'AM only' receivers.
QUICK REFERENCE DATA (at T
amb
= 25
°
C)
PACKAGE OUTLINE
16-lead DIL; plastic (SOT38); SOT38-1; 1996 July 25.
Supply voltage
Supply current
AM performance (pin 2) for m = 0,3
Sensitivity
at V
o
= 10 mV
at S/N = 26 dB
A.F. output voltage at V
i
= 1 mV
Total harmonic distortion at V
i
= 1 mV
FM performance (pin 1) for
f =
±
22,5 kHz
limiting sensitivity,
3 dB
Signal-to-noise ratio for V
i
= 1 mV
A.F. output voltage at V
i
= 1 mV
Total harmonic distortion at V
i
= 1 mV
AM suppression at V
i
= 10 mV
V
P
= V
7-16
I
7
typ.
typ.
5,4 V
6,2 mA
V
i
V
i
V
o
THD
typ.
typ.
typ.
typ.
1,7
μ
V
16
μ
V
100 mV
0,5 %
V
i
S/N
V
o
THD
AMS
typ.
typ.
typ.
typ.
typ.
110
μ
V
65 dB
100 mV
0,3 %
50 dB
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