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參數(shù)資料
| 型號： | TEA1501N |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.25 A SWITCHING REGULATOR, 50 kHz SWITCHING FREQ-MAX, PDIP8 |
| 封裝： | SOT-97, DIP-8 |
| 文件頁數(shù)： | 4/22頁 |
| 文件大?。?/td> | 154K |
| 代理商： | TEA1501N |
1998 Aug 19
12
Philips Semiconductors
Preliminary specication
Greeny; GreenChip
TEA1501
CHARACTERISTICS
Conditions unless otherwise specied:
10 °C <T
j <80 °C, RRef =24k 0.1%; 12V<VVaux <20 V. All voltages are
referred to ground. Positive currents ow into the IC.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
On Off Data section
Von/off
on/off level Greeny
0.4
0.7
0.9
V
Vdata(off)
data off level
20
A<IOOD < 100 A
0.9
1.3
1.6
V
Vdata(off)
data off level
IOOD = 2.5 mA
1.4
1.7
2.0
V
Vdata(on)
data on level
20
A<IOOD < 100 A
3.5
4.0
4.5
V
Vaux management
Vstart
start voltage
15
16
17
V
UVLO
Under Voltage Lockout
11.3
12
12.7
V
Startup current source
Istart
startup current, Vaux pin
VVaux =0V, VOOD > 0.9 V
3.0
2.2
1.5
mA
Istart
startup current, Vaux pin
VVaux =8V, VOOD > 0.9 V
2.4
1.8
1.2
mA
Istart
startup current, Vaux pin
VVaux = 15 V, VOOD > 0.9 V
1.9
1.3
0.8
mA
IDrn(on)
drain current during startup
VVaux =0V, VOOD > 0.9 V
1.8
2.6
3.4
mA
IDrn(off)
drain current in Off mode
VOOD < 0.4 V, VDrn = 300 V
40
100
A
Reference block
VRef
reference voltage
1.18
1.23
1.28
V
Temperature protection
Tprot
thermal shutdown
130
140
150
°C
Thys
thermal hysteresis
35
40
45
°C
Switch oscillator
kswitch
switch oscillation constant
0.67
0.82
1.00
s/k
δ
cy(max)
maximum switch duty cycle
60
66
72
%
Burst oscillator
kburst
burst oscillation factor
7.0
7.5
8.1
Counter
Ndata
number of current pulses for
data transfer
50
56
62
Power switch
VBD
breakdown voltage
IDrn(off) + 100 A
650
V
Rdson
on resistance
Tj =25 °C, IDrn =80mA
25
40
55
tf
fall time
VDrn = 300 V, Rdr = 2 k
50
ns
tr
rise time
VDrn = 300 V, Rdr = 2 k
100
ns
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