參數(shù)資料
型號: TEA1095T
廠商: NXP SEMICONDUCTORS
元件分類: 無繩電話/電話
英文描述: Voice switched speakerphone IC
中文描述: SPEAKER PHONE CIRCUIT, PDSO24
封裝: PLASTIC, SOT-137, SO-24
文件頁數(shù): 15/28頁
文件大小: 184K
代理商: TEA1095T
1997 Nov 25
15
Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
G
vrxm
gain reduction with MUTERX
active
MUTERX = HIGH
80
dB
Envelope and noise detectors (TSEN, TENV, TNOI, RSEN, RENV and RNOI)
P
REAMPLIFIERS
G
v(TSEN)
G
v(RSEN)
voltage gain from TXIN to TSEN
voltage gain between RXIN to
RSEN
40
0
dB
dB
L
OGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT
det(TSEN)
sensitivity detection on pin TSEN;
voltage change on pin TENV
when doubling the current from
TSEN
det(RSEN)
sensitivity detection on pin RSEN;
voltage change on pin RENV
when doubling the current from
RSEN
I
TSEN
= 0.8 to 160
μ
A
18
mV
I
RSEN
= 0.8 to 160
μ
A
18
mV
S
IGNAL ENVELOPE DETECTORS
I
source(ENV)
maximum current sourced from
pin TENV or RENV
maximum current sunk by
pin TENV or RENV
voltage difference between
pins RENV and TENV
120
μ
A
I
sink(ENV)
0.75
1
1.25
μ
A
V
ENV
when 10
μ
A is sourced
from both RSEN and
TSEN; envelope detectors
tracking; note 1
±
3
mV
N
OISE ENVELOPE DETECTORS
I
source(NOI)
maximum current sourced from
pins TNOI or RNOI
maximum current sunk by
pins TNOI or RNOI
voltage difference between
pins RNOI and TNOI
0.75
1
1.25
μ
A
I
sink(NOI)
120
μ
A
V
NOI
when 2
μ
A is sourced
from both RSEN and
TSEN; noise detectors
tracking; note 1
±
3
mV
D
IAL TONE DETECTOR
V
RINDT(rms)
threshold level at pin RXIN
(RMS value)
42
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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