參數(shù)資料
型號: TE28F160B3TC80
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory
中文描述: 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 25/49頁
文件大小: 427K
代理商: TE28F160B3TC80
E
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
25
PRELIMINARY
Start
Write B0H
Read Status Register
Bus Operation
Write
Write
No
Command
Erase Suspend
Read Array
Comments
Data = B0H
Addr = X
Data = FFH
Addr = X
SR.7 =
SR.6 =
1
Write FFH/40H
Read Array Data/
Program Array
Erase Completed
Done
Reading and/or
Programming
Yes
Write FFH
Write D0H
Erase Resumed
Read Array Data
0
1
0
Read
Read array data from block
other than the one being
erased.
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Addr = X
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
Check SR.6
1 = Erase Suspended
0 = Erase Completed
Write
Erase Resume
Data = D0H
Addr = X
Program
Program data to block other
than the one being erased.
0580_10
Figure 10. Erase Suspend/Resume Flowchart
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