參數(shù)資料
型號(hào): TDK5100F
廠商: INFINEON TECHNOLOGIES AG
英文描述: 434 MHz ASK/FSK Transmitter in 10-pin Package
中文描述: 434兆赫詢(xún)價(jià)/ FSK發(fā)射器采用10引腳封裝
文件頁(yè)數(shù): 27/35頁(yè)
文件大?。?/td> 503K
代理商: TDK5100F
Applications
3 - 9
TDK 5100 F
Preliminary
Wireless Components
Target Specification, July 2003
The output power P
o
is reduced by operating in an
overcritical
mode
characterised by R
L
> R
LC
.
The power efficiency (and the bandwidth) increase when operating at a slightly
higher R
L
, as shown in Figure 3-5.
The collector efficiency E is defined as
The diagram of Figure 3-5 was measured directly at the PA-output at V
S
= 3 V.
Losses in the matching circuitry decrease the output power by about 1.5 dB. As
can be seen from the diagram, 550
is the optimum impedance for operation
at 3 V. For an approximation of R
OPT
and P
OUT
at other supply voltages those
two formulas can be used:
and
Power_output.wmf
Figure 3-5
Output power P
o
(mW) and collector efficiency E vs. load resistor R
L
.
The DC collector current I
c
of the power amplifier and the RF output power P
o
vary with the load resistor R
L
. This is typical for overcritical operation of class C
amplifiers. The collector current will show a characteristic dip at the resonance
frequency for this type of
overcritical
operation. The depth of this dip will
increase with higher values of R
L
.
C
S
O
I
V
P
E
=
S
OPT
V
R
~
OPT
OUT
P
R
~
0
1
2
3
4
5
6
7
0
1000
2000
3000
R L [Ohm ]
10*E
Po
10*E
Po [mW ]
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