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參數(shù)資料
| 型號： | TDA5360 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads |
| 中文描述： | 預硬盤放大器磁共振讀/寫磁頭感應(yīng) |
| 文件頁數(shù)： | 17/34頁 |
| 文件大?。?/td> | 198K |
| 代理商： | TDA5360 |
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1998 July 30
Philips Semiconductors
Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
TDA5360
17
10.6
Registers description
Nb
0
Register Name
Head Select Register
Contents
HS3..HS0 = 0,0,0,0 to 1,0,1,1 = H0 to H11
SELT : if HIGH, the multiple selection detector is enabled. Inactive in STW mode
SELF : is set HIGH if illegal MDS is detected (read back only bit)
( Note 0 )
LCS1,LCS0 : copy of CS1,CS0 pins state (read back only bits)
PORI : Select a MR Bias mode.
LOW = Current
Bias
HIGH = Power
Bias
GMR : select the range to be used in current or power
LOW = SAL
range
HIGH = GMR
range
RIN1,0 = define the input impedance of the reader.
(0,0)
=
30
(0,1)
=
23
(1,0)
=
18
(1,1)
=
15
1
Control Register
RVORI = Reader output buffer mode.
LOW
=
Voltage mode
HIGH
=
Current mode
WVORI = Writer data inputs mode.
LOW
=
Voltage mode,
HIGH
=
Current mode
( Note 1a)
BFCTL = Control of BFAST pin functionality
( Note 1b)
DUMMY : Dummy head is selected in read mode if LOW
2
Reader Bias Register
PWR4...PWR0 = define Imr current/power.
Range according to GMR bit setting
Rmr current bias mode :
SAL : Imr = 4mA+200uA*(pwr0 + 2 * pwr1 + 4 * pwr2 + 8 * pwr3 + 16 * pwr4)
GMR : Imr = 3mA+100uA*(pwr0 + 2 * pwr1 + 4 * pwr2 + 8 * pwr3 + 16 * pwr4)
Rmr power bias mode :
SAL : Pwr = 1.5mW+250uW*(pwr0 + 2 * pwr1 + 4 * pwr2 + 8 * pwr3 + 16 * pwr4)
GMR : Pwr = 375uW+62.5uW*(pwr0 + 2 * pwr1 + 4 * pwr2 + 8 * pwr3 + 16 * pwr4)
GAIN1, GAIN0 = read amplifier gain.
(0,0)
= 44 dB
(0,1)
= 47 dB
(1,0)
= 50 dB
(1,1)
= Differentiator only
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