參數(shù)資料
型號: TD62308BFG
廠商: Toshiba Corporation
英文描述: 4CH LOW INPUT ACTIVE HIGE−CURRENT DARLINGTON SINK DRIVER
文件頁數(shù): 2/11頁
文件大?。?/td> 411K
代理商: TD62308BFG
TD62308BP1G/BFG
2006-06-13
2
Schematics
(each driver)
Note : The Output parasitic diodes cannot be used as clamp diodes.
Precautions for Using
(1) This IC does not include built-in protection circuits for excess current or overvoltage.
If this IC is subjected to excess current or overvoltage, it may be destroyed.
Hence, the utmost care must be taken when systems which incorporate this IC are designed.
Utmost care is necessary in the design of the output line, VCC, COMMON and GND line since IC may be
destroyed due to short
circuit between outputs, air contamination fault, or fault by improper grounding.
(2) If a TD62308BP-1/BF is being used to drive an inductive load (such as a motor, solenoid or relay), Toshiba
recommends that the diodes (pins 9 and 16) be connected to the secondary power supply pin so as to absorb
the counter electromotive force generated by the load. Please adhere to the device’s absolute maximum ratings.
Toshiba recommends that zener diodes be connected between the diodes (pins 9 and 16) and the secondary
power supply pin (as the anode) so as to enable rapid absorption of the counter electromotive force. Again,
please adhere to the device’s absolute maximum ratings.
Absolute Maximum Ratings
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Supply Voltage
V
CC
7
V
Output Sustaining Voltage
V
CE (SUS)
0.5~80
V
Parasitic Transistor Output Voltage
V
CEF
(Note 1)
80
V
Output Current
I
OUT
1.5
A / ch
Input Current
I
IN
10
mA
Input Voltage
V
IN
7
V
Clamp Diode Reverse Voltage
V
R
80
V
Clamp Diode Forward Current
I
F
1.5
A
BP1G
1.47 / 2.7
(Note 2)
Power Dissipation
BFG
P
D
0.9 / 1.4
(Note 3)
W
Operating Temperature
T
opr
40~85
°C
Storage Temperature
T
stg
55~150
°C
Note 1: Parasitic Transistor (COMMON - GND - OUTPUT) Output Voltage
Note 2: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 50%)
Note 3: On Glass Epoxy PCB (60 × 30 × 1.6 mm Cu 30%)
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