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參數(shù)資料
| 型號(hào)： | TCS800 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 800 Watts, 50 Volts, Pulsed Avionics 1030 MHz |
| 中文描述： | 800瓦，50伏特，脈沖航空電子1030兆赫 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 19K |
| 代理商： | TCS800 |
R.-.061300
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.GHZ.COM
OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TCS800
800 Watts, 50 Volts, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The TCS800 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 MHz, with the pulse
width and duty required for TCAS applications. The device has gold thin-film
metallization and diffused ballasting for proven highest MTTF. The transistor
includes input and output prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55SM Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25
°
C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
Collector Current (I
c
)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
1944 W
65 V
3.5 V
50 A
-65 to +200
°
C
+230
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
P
out
P
in
P
g
η
c
R
L
Pd
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
F = 1030 MHz
V
CC
= 50 Volts
PW = 32
μ
sec
DF = 1%
800
W
W
dB
%
120
8.0
9.0
45
Input Return Loss
Pulse Droop
Load Mismatch Tolerance
-12
0.5
dB
dB
F = 1030 MHz
4:1
FUNCTIONAL CHARACTERISTICS @ 25
°
C
BV
ebo
*
BV
ces
h
FE
*
θ
jc
1
NOTE 1: At rated output power and pulse conditions.
*: Not measureable due to internal EB returns
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 70 mA
Ic = 100 mA
Vce = 5V, Ic = 5A
3.5
65
20
V
V
0.09
°
C/W
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