參數(shù)資料
型號： TCRT1010
廠商： VISHAY SEMICONDUCTORS
元件分類： 線性位移傳感器
英文描述： Position, Linear, Photoelectric Sensor, POSITION, LINEAR SENSOR-DIFFUSE, 0.2-4mm, 0.30-0.50mA, RECTANGULAR, THROUGH HOLE MOUNT, 7 X 4 MM, 2.50 MM HEIGHT, ROHS COMPLIANT PACKAGE-4
中文描述： Photointerruptors Reflective Sensor w/Transistor Output
文件頁數(shù)： 2/10頁
文件大?。?/td> 235K
代理商： TCRT1010
TCRT1000, TCRT1010
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 11-Jun-12
2
Document Number: 83752
For technical questions, contact:
sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Notes
(1)
Measured with the “Kodak neutral test card”, white side with 90 % diffuse reflectance
(2)
Measured without reflecting medium
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
V
CEO
V
ECO
I
C
P
V
T
j
32
5
50
100
100
V
V
mA
mW
°C
T
amb
≤
25 °C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
0
100
200
300
0
95 11071
P
T
amb
- Ambient Temperature (°C)
IR - diode
Coupled device
Phototransistor
25
50
75
100
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SENSOR
V
CE
= 5 V, I
F
= 20 mA,
Cross talk current
V
CE
= 5 V, I
F
= 20 mA, (figure 1)
Collector emitter saturation
voltage
d = 1 mm (figure 2)
INPUT (EMITTER)
Forward voltage
I
F
= 50 mA
Radiant intensity
I
F
= 50 mA, t
p
= 20 ms
Peak wavelength
I
F
= 100 mA
Virtual source diameter
Method: 63 % encircled energy
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
I
E
= 100 μA
Collector dark current
V
CE
= 20 V, I
F
= 0 A, E = 0 lx
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector current
I
C
(1)
0.3
0.5
mA
I
CX
(2)
1
μA
I
F
= 20 mA, I
C
= 0.1 mA,
V
CEsat
(1)
0.3
V
V
F
I
e
λ
P
d
1.25
1.6
7.5
V
mW/sr
nm
mm
940
1.2
I
C
= 1 mA
V
CEO
V
ECO
I
CEO
32
5
V
V
nA
200
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TCRT1010S 制造商:Vishay Semiconductors 功能描述:SENS REFL NO LENS PARAL AXES CUT LEAD-E4
TCRT5000 功能描述:光學(xué)開關(guān)（反射型，光電晶體管輸出） 12mm Sense 950nm RoHS:否 制造商:Fairchild Semiconductor 感應(yīng)距離:1 mm 輸出設(shè)備:Phototransistor 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電壓:1.2 V 反向電壓:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 安裝風(fēng)格:SMD/SMT 封裝:Reel
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