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參數(shù)資料
| 型號： | TCET2200 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Optocoupler with Phototransistor Output |
| 中文描述： | 與光電晶體管光電耦合器輸出 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 231K |
| 代理商： | TCET2200 |
TCET120.(G) up to TCET2200
Vishay
Semiconductors
www.vishay.com
Document Number 83501
Rev. A2, 08–Feb–01
5 (12)
Maximum Safety Ratings
(according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Test Conditions
Symbol
I
si
Value
130
Unit
mA
Forward current
Output (Detector)
Parameters
Test Conditions
T
amb
≤
25 C
Symbol
P
si
Value
265
Unit
mW
Power dissipation
Coupler
Parameters
Test Conditions
Symbol
V
IOTM
T
si
Value
8
150
Unit
kV
C
Rated impulse voltage
Safety temperature
Insulation Rated Parameters
(according to VDE 0884)
Parameter
Test Conditions
100%, t
test
= 1 s
Symbol
V
pd
Min.
1.6
Typ.
Max.
Unit
kV
Partial discharge test voltage –
Routine test
Partial discharg
Lot test (sample test)
Insulation resistance
t
= 60 s, t
= 10 s,
Tr
(see figure 2)
V
IO
= 500 V
V
IO
= 500 V,
T
amb
= 100 C
V
IO
= 500 V,
T
amb
= 150 C
(construction test only)
V
IOTM
V
pd
R
IO
R
IO
8
kV
kV
g
test
1.3
10
12
10
11
R
IO
10
9
0
25
50
75
125
0
50
100
150
200
300
P
t
T
si
– Safety Temperature (
°
C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
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| TCET2200G | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Dual CTR > 50-600% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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