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參數(shù)資料
| 型號(hào)： | TC7SG00FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | 2 Input NAND Gate |
| 中文描述： | 二輸入與非門(mén) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | TC7SG00FE |
TC7SG00FE
2007-11-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG00FE
2 Input NAND Gate
Features
High-level output current:
at V
CC
= 3.0 V
High-speed operation: t
pd
= 2.5 ns (typ.)
at V
CC
= 3.3 V,15pF
Operating voltage range: V
CC
= 0.9~3.6 V
5.5-V tolerant inputs.
3.6-V power down protection output.
Marking Pin Assignment (top view)
I
OH
/I
OL
= ±8 mA (min)
Absolute Maximum Ratings
(Ta = 25°C)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
V
CC
= 0V
High or Low State. I
OUT
absolute maximum rating must be observed.
V
OUT
< GND
Note 1:
Note 2:
Note 3:
(ESV)
Weight: 0.003 g (typ.)
Characteristics
Symbol
V
CC
V
IN
Value
0.5~4.6
Unit
V
Power supply voltage
DC input voltage
0.5~7.0
V
0.5~4.6 (Note 1)
0.5~V
CC
+
0.5 (Note 2)
DC output voltage
V
OUT
V
Input diode current
I
IK
20
mA
Output diode current
I
OK
20
(Note 3)
mA
DC output current
I
OUT
±25
mA
DC V
CC
/ground current
I
CC
±50
mA
Power dissipation
P
D
T
stg
150
mW
Storage temperature
65~150
°C
Product name
W 1
IN A
GND
IN B 1
2
3
5
4
V
CC
OUT Y
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC7SG00FE(TE85L,F) | 功能描述:邏輯門(mén) 2-Input NAND Gate 5Pin RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
| TC7SG00FE_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic |
| TC7SG00FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2 Input NAND Gate |
| TC7SG00FU(T5L,F,T) | 功能描述:邏輯門(mén) 2-Input NAND Gate 5Pin RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
| TC7SG00FU(TE85L,F) | 功能描述:邏輯門(mén) 2-Input NAND 1 8mA 2.2ns 3.6V RoHS:否 制造商:Toshiba 產(chǎn)品: 邏輯系列: 柵極數(shù)量: 線路數(shù)量（輸入/輸出）: 高電平輸出電流: 低電平輸出電流: 傳播延遲時(shí)間: 電源電壓-最大: 電源電壓-最小: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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