參數資料
型號: TC74ACT299P
廠商: Toshiba Corporation
英文描述: CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit PIPO Shift Register with Asynchronous Clear
中文描述: CMOS數字集成電路硅單片8位皮普移位寄存器的異步清除
文件頁數: 6/9頁
文件大?。?/td> 451K
代理商: TC74ACT299P
TC74ACT299P/F
2007-10-01
6
AC Characteristics
(C
L
=
50 pF, R
L
=
500
Ω
, input: t
r
=
t
f
=
3 ns)
Test Condition
Ta
=
25°C
Ta
=
40 to
85°C
Characteristics
Symbol
V
CC
(V)
Min
Typ.
Max
Min
Max
Unit
Propagation delay
time
(CK-QA’, QH’)
t
pLH
t
pHL
5.0
±
0.5
7.2
10.5
1.0
12.0
ns
Propagation delay
time
(
CLR
-QA’, QH’)
t
pHL
5.0
±
0.5
6.0
10.0
1.0
11.5
ns
Propagation delay
time
(CK-QA~QH)
t
pLH
t
pHL
5.0
±
0.5
7.4
11.4
1.0
13.0
ns
Propagation delay
time
(
CLR
-QA~QH)
t
pHL
5.0
±
0.5
6.3
10.5
1.0
12.0
ns
Output enable time
t
pZL
t
pZH
5.0
±
0.5
7.4
11.4
1.0
13.0
ns
Output disable time
t
pLZ
t
pHZ
5.0
±
0.5
7.2
9.6
1.0
11.0
ns
Maximum clock
frequency
f
max
5.0
±
0.5
80
120
80
MHz
Input capacitance
C
IN
5
10
10
pF
Bus input capacitance
C
I/O
13
pF
Power dissipation
capacitance
C
PD
(Note)
160
pF
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC
(opr)
=
C
PD
V
CC
f
IN
+
I
CC
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