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參數(shù)資料
| 型號： | TC682EPA |
| 廠商： | TelCom Semiconductor, Inc. |
| 英文描述： | INVERTING VOLTAGE DOUBLER |
| 中文描述： | 反向電壓倍增 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 80K |
| 代理商： | TC682EPA |
4-22
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
V
IN
.......................................................................... +5.8V
V
IN
dV/dT ............................................................. 1V/
μ
sec
V
OUT
......................................................................– 11.6V
V
OUT
Short-Circuit Duration ............................Continuous
Power Dissipation (T
A
≤
70
°
C)
Plastic DIP
...........................................................
730mW
SOIC ...............................................................470mW
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
PIN DESCRIPTION
Pin No.
8-Pin DIP/SOIC
Symbol Description
1
C
1
–
Input. Capacitor C1 negative
terminal.
Input. Capacitor C2 positive
terminal.
Input. Capacitor C2 negative
terminal
Output. Negative output voltage
(– 2V
IN
)
Input. Device ground.
Input. Power supply voltage.
Input. Capacitor C1 positive
terminal
No Connection
2
C
2
+
3
C
2
–
4
V
OUT
5
6
7
GND
V
IN
C
1
+
8
N/C
Figure 1. TC682 Test Circuit
V
GND
GND
C2+
C2–
RL
C1+
C1
C2
C1–
IN
VIN
(+5V)
VOUT
C
All Caps = 3.3
μ
F
OUT
TC682
V–
–
+
6
7
1
2
3
5
4
–
+
–
+
*This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of
the specifications is not implied. Exposure to Absolute Maximum Rating
Conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS:
Over Operating Temperature Range, V
IN
= +5V, test circuit Figure 1,
unless otherwise indicated.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IN
I
IN
Supply Voltage Range
Supply Current
R
L
= 2k
R
L
=
∞
, T
A
=
25
°
C
R
L
=
∞
I
L
I
L
I
L
2.4
—
—
—
—
—
—
90
99
—
185
—
140
—
170
12
92
99.9
5.5
300
400
180
230
320
—
—
—
V
μ
A
R
OUT
V
OUT
Source Resistance
Source Resistance
–
= 10mA, T
A
=
25
°
C
–
= 10mA
–
= 5mA, V
IN
= 2.8V
F
OSC
P
EFF
V
OUT
E
FF
Oscillator Frequency
Power Efficiency
Voltage Conversion Efficiency
kHz
%
%
R
L
= 2k
, T
A
=
25
°
C
V
OUT
, R
L
=
∞
TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums
and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use
of any circuits described herein and makes no representations that they are free from patent infringement.
INVERTING VOLTAGE DOUBLER
TC682
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