4-6
TELCOM SEMICONDUCTOR, INC.
ELECTRICAL CHARACTERISTICS:
Specifications Measured Over Operating Temperature Range With,
V
+
= 5V, C
OSC
= Open, C1, C2 = 150
μ
F, FC = Open, Test Circuit
(Figure 1), unless otherwise indicated.
Symbol
Parameter
Test Conditions
I
+
Supply Current
R
L
=
∞
FC pin = OPEN or GND
FC pin = V
+
V
+
Supply Voltage Range
LV = HIGH, R
L
= 1 k
LV = GND, R
L
= 1 k
LV = OUT, R
L
= 1 k
(Figure 9)
R
OUT
Output Source Resistance
I
OUT
= 100mA
I
OUT
Output Current
V
OUT
< – 4V
F
OSC
Oscillator Frequency
Pin 7 open; Pin 1 open or GND
Pin 1 = V
+
I
OSC
Input Current
Pin 1 open
Pin 1 = V
+
P
EFF
Power Efficiency (Note 4)
R
L
= 1 k
connected between V
+
& V
OUT
R
L
= 500
connected between V
OUT
& GND
I
L
= 100mA to GND
V
OUT
E
FF
Voltage Conversion Efficiency
NOTES:
1. Connecting any input terminal to voltages greater than V
+
or less than GND may cause destructive latch-up. It is recommended that no
inputs from sources operating from external supplies be applied prior to "power up" of the TC660.
2. Derate linearly above 50
°
C by 5.5 mW/
°
C.
3. To prevent damaging the device, do not short V
OUT
to V
+
.
4. To maximize output voltage and efficiency performance, use low ESR capacitors for C
1
and C
2
.
Min
Typ
Max
Unit
—
—
3
1.5
2.5
—
100
—
—
—
—
96
92
—
99
200
1
—
—
—
6.5
—
10
90
+1.1
+5
98
96
88
99.9
500
3
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
μ
A
mA
V
mA
kHz
μ
A
%
R
L
=
∞
%
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ........................................................... +6V
LV, FC, OSC Input
Voltage (Note 1) .......................V
OUT
– 0.3V to (V
+
+0.3V)
Current Into LV (Note 1)......................20
μ
A for V
+
>3.5V
Output Short Duration (V
SUPPLY
≤
5.5V) (Note 3) ..10 Sec
Power Dissipation (Note 2) (T
A
≤
70
°
C)
SOIC...............................................................470mW
Plastic DIP ......................................................730mW
Operating Temperature Range
C Suffix ..................................................0
°
C to +70
°
C
E Suffix .............................................– 40
°
C to +85
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
TC660
100mA CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER