參數(shù)資料
型號: TC649EPA
廠商: Microchip Technology Inc.
英文描述: PWM Fan Speed Controller with Auto-Shutdown and FanSense⑩ Technology
中文描述: PWM風(fēng)扇帶自動調(diào)速器關(guān)斷和FanSense⑩技術(shù)
文件頁數(shù): 13/28頁
文件大?。?/td> 478K
代理商: TC649EPA
2002 Microchip Technology Inc.
DS21449C-page 13
TC649
Table 5-2 gives examples of some commonly available
transistors and MOSFETs. This table should be used
as a guide only since there are many transistors and
MOSFETs which will work just as well as those listed.
The critical issues when choosing a device to use as
Q1 are: (1) the breakdown voltage (V
(BR)CEO
or V
DS
(MOSFET)) must be large enough to withstand the
highest voltage applied to the fan (
Note:
This will occur
when the fan is off); (2) 5 mA of base drive current must
be enough to saturate the transistor when conducting
the full fan current (transistor must have sufficient
gain); (3) the V
OUT
voltage must be high enough to suf-
ficiently drive the gate of the MOSFET to minimize the
R
DS(on)
of the device; (4) rated fan current draw must
be within the transistor's/MOSFET's current handling
capability; and (5) power dissipation must be kept
within the limits of the chosen device.
FIGURE 5-6:
Output Drive Transistor Circuit Topologies.
TABLE 5-2:
TRANSISTORS AND MOSFETS FOR Q
1
(V
DD
= 5V)
Max. V
BE(sat)
/V
GS
(V)
Device
Package
Min. H
FE
V
CEO
/V
DS
(V)
Fan Current
(mA)
Suggested
R
BASE
(
)
800
800
301
Note 1
Note 1
Note 1
Note 1
MMBT2222A
MPS2222A
MPS6602
SI2302
MGSF1N02E
SI4410
SI2308
Note 1:
A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times.
SOT-23
TO-92
TO-92
SOT-23
SOT-23
SO-8
SOT-23
1.2
1.2
1.2
2.5
2.5
4.5
4.5
50
50
50
NA
NA
NA
NA
40
40
40
20
20
30
60
150
150
500
500
500
1000
500
Q
1
Q
1
Q
2
GND
V
DD
R
SENSE
R
BASE
VOUT
V
OUT
Fan
a) Single Bipolar Transistor
Q
1
GND
VDD
R
SENSE
V
OUT
C) N-Channel MOSFET
GND
V
DD
R
SENSE
R
BASE
Fan
b) Darlington Transistor Pair
Fan
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