參數(shù)資料
型號(hào)： TC59LM806CFT-60
廠商： Toshiba Corporation
英文描述： 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
中文描述： 4194304 / 8388608 - 4字×銀行× 16 / 8 - BITS的網(wǎng)絡(luò)的FCRAM
文件頁(yè)數(shù)： 1/38頁(yè)
文件大小： 2326K
代理商： TC59LM806CFT-60
TC59LM814/06CFT-50,-55,-60
2002-08-19 1/38
4,194,304-WORDS
×
4
BANKS
×
16-BITS Network FCRAM
TM
8,388,608-WORDS
×
4
BANKS
×
8-BITS Network FCRAM
TM
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
Network FCRAM
TM
is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network
FCRAM
TM
containing 268,435,456 memory cells. TC59LM814CFT is organized as 4,194,304-words
×
4 banks s
×
16
bits, TC59LM806CFT is organized as 8,388,608 words
×
4 banks
×
8 bits. TC59LM814/06CFT feature a fully
synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which
enables high performance and simple user interface coexistence. TC59LM814/06CFT can operate fast core cycle
using the FCRAM
TM
core architecture compared with regular DDR SDRAM.
TC59LM814/06CFT is suitable for Network, Server and other applications where large memory density and low
power consumption are required. The Output Driver for Network FCRAM
TM
is capable of high quality fast data
transfer under light loading condition.
FEATURES
TC59LM814/06
-55
6 ns
5.5 ns
27.5 ns
24 ns
180 mA
2 mA
3 mA
PARAMETER
-50
5.5 ns
5 ns
25 ns
22 ns
190 mA
2 mA
3 mA
-60
6.5 ns
6 ns
30 ns
26 ns
170 mA
2 mA
3 mA
CL
=
3
CL
=
4
t
CK
Clock Cycle Time (min)
t
RC
t
RAC
Random Access Time (max)
I
DD1S
Operating Current (single bank) (max)
l
DD2P
Power Down Current (max)
l
DD6
Self-Refresh Current (max)
Random Read/Write Cycle Time (min)
Fully Synchronous Operation
Double Data Rate (DDR)
Data input/output are synchronized with both edges of DQS.
Differential Clock (CLK and CLK ) inputs
CS , FN and all address input signals are sampled on the positive edge of CLK.
Output data (DQs and DQS) is aligned to the crossings of CLK and CLK .
Fast clock cycle time of 5 ns minimum
Clock: 200 MHz maximum
Data:
400 Mbps/pin maximum
Quad Independent Banks operation
Fast cycle and Short Latency
Bidirectional Data Strobe Signal
Distributed Auto-Refresh cycle in 7.8
μ
s
Self-Refresh
Power Down Mode
Variable Write Length Control
Write Latency
=
CAS Latency-1
Programable CAS Latency and Burst Length
CAS Latency
=
3, 4
Burst Length
=
2, 4
Organization
TC59LM814CFT: 4,194,304 words
×
4 banks
×
16 bits
TC59LM806CFT: 8,388,608 words
×
4 banks
×
8 bits
Power Supply Voltage V
DD
:
2.5 V
±
0.15 V
V
DDQ
: 2.5 V
±
0.15 V
2.5 V CMOS I/O comply with SSTL-2 (half strength driver)
Package:
400
×
875 mil, 66 pin TSOPII, 0.65 mm pin pitch (TSOPII66-P-400-0.65)
Notice: FCRAM is a trademark of Fujitsu Limited, Japan.
相關(guān)PDF資料
PDF描述
TC59LM814CFT 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
TC59LM814CFT-50 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
TC59LM814CFT-60 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
TC59S6404BFT MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TC59S6404BFTL MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC59LM814CFT 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
TC59LM814CFT-50 制造商:Toshiba America Electronic Components 功能描述:DRAM Chip DDR FCRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II
TC59LM814CFT-55 制造商:Toshiba America Electronic Components 功能描述:DRAM Chip DDR FCRAM 256M-Bit 2.5V 66-Pin TSOP-II
TC59LM814CFT-60 制造商:Toshiba America Electronic Components 功能描述:DRAM Chip DDR FCRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II
TC59LM814CFTI-60 制造商:Toshiba America Electronic Components 功能描述:DRAM Chip FCRAM 256M-Bit 2.5V 66-Pin TSOP-II
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