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參數(shù)資料
| 型號(hào)： | TC58256AFT |
| 廠商： | Toshiba Corporation |
| 英文描述： | 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM |
| 中文描述： | 256兆（32兆x 8位）的CMOS NAND型E2PROM的 |
| 文件頁數(shù)： | 1/33頁 |
| 文件大?。?/td> | 345K |
| 代理商： | TC58256AFT |
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TC58256AFT
2001-05-30 1/33
Power supply
Program/Erase Cycles 1E5 cycle (with ECC)
Access time
Cell array to register 25 s max
Serial Read Cycle
Operating current
Read (50 ns cycle)
Program (avg.)
Erase (avg.)
Standby
Package
TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)
PIN NAMES
V
CC
2.7 V to 3.6 V
50 ns min
10 mA typ.
10 mA typ.
10 mA typ.
100 A
TENTATIVE
256-MBIT (32M 8 BITS) CMOS NAND E
2
PROM
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC58256A is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E
2
PROM) organized as 528 bytes 32 pages 2048 blocks. The device has a 528-byte
static register which allows program and read data to be transferred between the register and the memory cell array
in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes
32 pages).
The TC58256A is a serial-type memory device which utilizes the I/O pins for both address and data input/output
as well as for command inputs. The Erase and Program operations are automatically executed making the device
most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras
and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
Memory cell allay 528 64K 8
Register
Page size
Block size
Modes
Read, Reset, Auto Page Program
Auto Block Erase, Status Read
Mode control
Serial input/output
Command control
PIN ASSIGNMENT
(TOP VIEW)
528 8
528 bytes
(16K 512) bytes
I/O1 to I/O8
I/O port
CE
Chip enable
WE
Write enable
RE
Read enable
CLE
Command latch enable
ALE
Address latch enable
WP
Write protect
BY
/
RY
Ready/Busy
GND
Ground input
V
CC
Power supply
V
SS
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
NC
NC
I/O8
I/O7
I/O6
I/O5
NC
NC
NC
V
CC
V
NC
NC
NC
I/O4
I/O3
I/O2
I/O1
NC
NC
NC
NC
NC
NC
NC
NC
NC
GND
BY
/
RY
RE
CE
NC
NC
V
CC
V
NC
NC
CLE
ALE
WE
WP
NC
NC
NC
NC
NC
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EBA1
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| TC58512FT | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC58256AFT(EL) | 制造商:Toshiba America Electronic Components 功能描述:Flash Mem Parallel 3.3V 256M-Bit 32M x 8 35ns 48-Pin TSOP-I T/R |
| TC58256AFT(YBJ) | 制造商:Toshiba America Electronic Components 功能描述: |
| TC58256AFTI | 制造商:Toshiba America Electronic Components 功能描述:EEPROM, Serial, 256Mbit, 3.3V Supply, Industrial, TSOP I, 48-Pin |
| TC58256DC | 功能描述:IC SSFDC 256MBIT 3V SMART MEDIA RoHS:否 類別:存儲(chǔ)卡，模塊 >> 存儲(chǔ)器，PC 卡 系列:- 標(biāo)準(zhǔn)包裝:30 系列:- 存儲(chǔ)容量:8GB 存儲(chǔ)器類型:存儲(chǔ)卡 - Extreme III SD? |
| TC58256FT | 制造商:Toshiba America Electronic Components 功能描述:NAND Flash Serial 3.3V 256Mbit 32M x 8bit 35ns 48-Pin TSOP-I |
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