- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373577 > TC55VBM316AFTN (Toshiba Corporation) TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS PDF資料下載
參數(shù)資料
| 型號(hào)： | TC55VBM316AFTN |
| 廠商： | Toshiba Corporation |
| 英文描述： | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| 中文描述： | 馬鞍山暫定東芝數(shù)字集成電路硅柵CMOS |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 216K |
| 代理商： | TC55VBM316AFTN |
TC55VBM316AFTN/ASTN40,55
2002-08-05 1/15
TENTATIVE
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288
words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this
device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and
low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in
low-power mode at 0.7
μ
A standby current (at V
DD
=
3 V, Ta
=
25°C, typical) when chip enable (CE1) is asserted
high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for
data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB, UB )
provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme
temperature range of
40° to 85°C, the TC55VBM316AFTN/ASTN can be used in environments exhibiting extreme
temperature conditions. The TC55VBM316AFTN/ASTN is available in a plastic 48-pin thin-small-outline package
(TSOP).
FEATURES
Low-power dissipation
Operating: 9 mW/MHz (typical)
Single power supply voltage of 2.3 to 3.6 V
Power down features usingCE1 and CE2
Data retention supply voltage of 1.5 to 3.6 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of
40° to 85°C
Standby Current (maximum):
3.6 V
3.0 V
10
μ
A
5
μ
A
PIN ASSIGNMENT
(TOP VIEW)
PIN NAMES
48 PIN TSOP
A0~A18
A-1~A18
1
CE
, CE2
R/W
OE
LB ,
UB
I/O1~I/O16
BYTE
V
DD
GND
NC
OP*
Address Inputs (Word Mode)
Address Inputs (Byte Mode)
Chip Enable
Read/Write Control
Output Enable
Data Byte Control
Data Inputs/Outputs
Byte (
×
8 mode) Enable
Power
Ground
No Connection
Option
*: OP pin must be open or connected to GND.
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
R/W
CE2
OP
UB
LB
A18
Pin No.
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
A17
A7
A6
A5
A4
A3
A2
A1
A0
1
CE
GND
OE
I/O1
I/O9
I/O2 I/O10
Pin No.
33
34
35
36
37
38
I/O5 I/O13 I/O6 I/O14 I/O7 I/O15 I/O8 I/O16
39
40
41
42
43
44
45
46
47
48
Pin Name
I/O3 I/O11 I/O4 I/O12 V
DD
/A-1
GND
BYTE
A16
Access Times (maximum):
TC55VBM316AFTN/ASTN
40
55
Access Time
40 ns
55 ns
1
CE
Access Time
40 ns
55 ns
CE2 Access Time
40 ns
55 ns
OE
Access Time
25 ns
30 ns
Package:
TSOP
TSOP
48-P-1220-0.50 (AFTN) (Weight:0.51 g typ)
48-P-1214-0.50 (ASTN) (Weight:0.36 g typ)
(Normal)
25
48
24
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC55VBM316AFTN40 | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VBM316AFTN55 | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VBM316ASTN40 | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VBM316ASTN55 | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VCM208ASTN40 | 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC55VBM316AFTN40 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VBM316AFTN55 | 功能描述:IC SRAM 8MBIT 55NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
| TC55VBM316ASGN55(LA) | 制造商:Toshiba America Electronic Components 功能描述: |
| TC55VBM316ASTN40 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VBM316ASTN55 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。