參數(shù)資料
型號(hào): TC514102ASJ-60
廠商: Toshiba Corporation
英文描述: Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:20Vrms; Peak Surge Current (8/20uS), Itm:250A; Clamping Voltage 8/20us Max :70V; Peak Energy (10/1000uS):1.5J; Package/Case:Radial Leaded; Clamping Voltage Max, Vc:70V
中文描述: 4194304 × 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 2/22頁(yè)
文件大?。?/td> 681K
代理商: TC514102ASJ-60
相關(guān)PDF資料
PDF描述
TC514102AP 4,194,304 x 1 BIT DYNAMIC RAM
TC514102J10 4,194,304 x 1 BIT DYNAMIC RAM
TC514102AZ-60 Tantalum Capacitor; Capacitor Type:General Purpose; Voltage Rating:4VDC; Capacitor Dielectric Material:Tantalum; Capacitance:1500uF; Capacitance Tolerance:+/- 10%; ESR:0.2ohm; Leaded Process Compatible:Yes; Leakage Current:60uA RoHS Compliant: Yes
TC514260BJ 262,144 WORD X 16 BIT DYNAMIC RAM
TC514400AAZL-60 1,048,576 x 4 BIT DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC514102AZ-60 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM
TC514102J 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM
TC514102J10 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM
TC514102J80 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM
TC514102Z10 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM