型號(hào): | TC514101Z-80 |
廠商: | Toshiba Corporation |
英文描述: | CAP 120PF 100V 5% NP0(C0G) RAD.10 .15X.15 BULK TRIMMED-LEAD |
中文描述: | 4194304 × 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
文件頁(yè)數(shù): | 2/23頁(yè) |
文件大小: | 676K |
代理商: | TC514101Z-80 |
相關(guān)PDF資料 |
PDF描述 |
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TC514101AP | 4,194,304 WORD x 1 BIT DYNAMIC RAM |
TC514101AJ-60 | Voltage Regulator IC; Package/Case:3-TO-220; Supply Voltage:-35V; Output Current:1A; Output Voltage:-15V; Voltage Regulator Type:Negative Voltage; Mounting Type:Through Hole |
TC514101ASJ-60 | Bipolar Transistor; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):10; C-E Breakdown Voltage:400V; Collector Current:1A; DC Current Gain Max (hfe):150; Package/Case:TO-220; Power (Ptot):2W; Transistor Polarity:N Channel |
TC514101J | 4,194,304 x 1 BIT DYNAMIC RAM |
TC514101AZ-60 | 4,194,304 WORD x 1 BIT DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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TC514102AJ-60 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM |
TC514102AP | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM |
TC514102AP-60 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM |
TC514102ASJ-60 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM |
TC514102AZ-60 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM |