參數(shù)資料
型號(hào): TC514101Z-80
廠商: Toshiba Corporation
英文描述: CAP 120PF 100V 5% NP0(C0G) RAD.10 .15X.15 BULK TRIMMED-LEAD
中文描述: 4194304 × 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 2/23頁(yè)
文件大小: 676K
代理商: TC514101Z-80
相關(guān)PDF資料
PDF描述
TC514101AP 4,194,304 WORD x 1 BIT DYNAMIC RAM
TC514101AJ-60 Voltage Regulator IC; Package/Case:3-TO-220; Supply Voltage:-35V; Output Current:1A; Output Voltage:-15V; Voltage Regulator Type:Negative Voltage; Mounting Type:Through Hole
TC514101ASJ-60 Bipolar Transistor; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):10; C-E Breakdown Voltage:400V; Collector Current:1A; DC Current Gain Max (hfe):150; Package/Case:TO-220; Power (Ptot):2W; Transistor Polarity:N Channel
TC514101J 4,194,304 x 1 BIT DYNAMIC RAM
TC514101AZ-60 4,194,304 WORD x 1 BIT DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC514102AJ-60 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM
TC514102AP 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM
TC514102AP-60 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM
TC514102ASJ-60 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM
TC514102AZ-60 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM