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參數(shù)資料
| 型號： | TC514101ASJ-60 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Bipolar Transistor; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):10; C-E Breakdown Voltage:400V; Collector Current:1A; DC Current Gain Max (hfe):150; Package/Case:TO-220; Power (Ptot):2W; Transistor Polarity:N Channel |
| 中文描述： | 4194304字× 1位動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 15/23頁 |
| 文件大?。?/td> | 676K |
| 代理商： | TC514101ASJ-60 |
相關PDF資料 |
PDF描述 |
|---|---|
| TC514101J | 4,194,304 x 1 BIT DYNAMIC RAM |
| TC514101AZ-60 | 4,194,304 WORD x 1 BIT DYNAMIC RAM |
| TC514101AP-60 | 4,194,304 WORD x 1 BIT DYNAMIC RAM |
| TC514101Z-10 | 4,194,304 x 1 BIT DYNAMIC RAM |
| TC514102Z10 | MB 3C 3#16 SKT RECP |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TC514101AZ-60 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 WORD x 1 BIT DYNAMIC RAM |
| TC514101J | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM |
| TC514101J-10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM |
| TC514101J-80 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM |
| TC514101Z-10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM |
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