參數資料
型號: TC514101AP
廠商: Toshiba Corporation
英文描述: 4,194,304 WORD x 1 BIT DYNAMIC RAM
中文描述: 4194304字× 1位動態(tài)隨機存儲器
文件頁數: 13/23頁
文件大小: 676K
代理商: TC514101AP
相關PDF資料
PDF描述
TC514101AJ-60 Voltage Regulator IC; Package/Case:3-TO-220; Supply Voltage:-35V; Output Current:1A; Output Voltage:-15V; Voltage Regulator Type:Negative Voltage; Mounting Type:Through Hole
TC514101ASJ-60 Bipolar Transistor; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):10; C-E Breakdown Voltage:400V; Collector Current:1A; DC Current Gain Max (hfe):150; Package/Case:TO-220; Power (Ptot):2W; Transistor Polarity:N Channel
TC514101J 4,194,304 x 1 BIT DYNAMIC RAM
TC514101AZ-60 4,194,304 WORD x 1 BIT DYNAMIC RAM
TC514101AP-60 4,194,304 WORD x 1 BIT DYNAMIC RAM
相關代理商/技術參數
參數描述
TC514101AP-60 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 WORD x 1 BIT DYNAMIC RAM
TC514101ASJ-60 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 WORD x 1 BIT DYNAMIC RAM
TC514101AZ-60 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 WORD x 1 BIT DYNAMIC RAM
TC514101J 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM
TC514101J-10 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 x 1 BIT DYNAMIC RAM