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參數(shù)資料
| 型號： | TC511402AJ-60 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Bipolar Transistor; Power Dissipation, Pd:40W; DC Current Gain Min (hfe):2.3; Collector Current:7A; DC Current Gain Max (hfe):150; Power (Ptot):40W; Transistor Polarity:N Channel RoHS Compliant: Yes |
| 中文描述： | 1,048,576 × 4位動態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 656K |
| 代理商： | TC511402AJ-60 |
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC511402ASJ-60 | Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP |
| TC511402AZ-60 | 1,048,576 x 4 BIT DYNAMIC RAM |
| TC5117400BSJ | 4,194,304 WORD X 4 BIT DYNAMIC RAM |
| TC5117400BST-60 | 4,194,304 WORD X 4 BIT DYNAMIC RAM |
| TC5117400BST-70 | 4,194,304 WORD X 4 BIT DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC511402AP-60 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576 x 4 BIT DYNAMIC RAM |
| TC511402ASJ-60 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576 x 4 BIT DYNAMIC RAM |
| TC511402AZ-60 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576 x 4 BIT DYNAMIC RAM |
| TC5116100CSJ-60 | 制造商:Toshiba America Electronic Components 功能描述: |
| TC5116101FT-80 | 制造商:Toshiba America Electronic Components 功能描述: |
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