參數(shù)資料
型號: TC4423EPA
廠商: TelCom Semiconductor, Inc.
英文描述: 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
中文描述: 第3A雙高速功率MOSFET驅(qū)動器
文件頁數(shù): 3/7頁
文件大?。?/td> 84K
代理商: TC4423EPA
4-239
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
3A DUAL HIGH-SPEED
POWER --MOSFET DRIVERS
TC4423
TC4424
TC4425
Figure 1. Inverting Driver Switching Time
Figure 2. Noninverting Driver Switching Time
OUTPUT
INPUT
0.1
μ
F CERAMIC
+5V
INPUT
10%
90%
10%
90%
10%
90%
16V
OUTPUT
tD1
tF
CL
1
μ
F
WIMA
MKS-2
VDD = 16V
0V
0V
TC4423
(1/2 TC4425)
Test Circuit
1
2
tD2
tR
INPUT: 100 kHz,
square wave,
tRISE = tFALL
10 nsec
90%
10%
10%
10%
tD1
+5V
INPUT
16V
OUTPUT
0V
0V
90%
90%
OUTPUT
INPUT
0.1
μ
F CERAMIC
CL
1
μ
F
WIMA
MKS-2
VDD = 16V
TC4424
(1/2 TC4425)
Test Circuit
1
2
tD2
tR
tF
INPUT: 100 kHz,
square wave,
tRISE = tFALL
10 nsec
ELECTRICAL CHARACTERISTICS
(Cont.):
Over operating temperature range with 4.5V
V
DD
18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
R
O
I
PK
I
REV
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
– 10
0.8
10
V
V
μ
A
0V
V
IN
V
DD
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
V
DD
– 0.025
1.5
3.7
4.3
3
V
V
A
A
0.025
8
8
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
Duty Cycle
2%
t
300
μ
sec
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
Power Supply
I
S
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1, C
L
= 1800 pF
Figure 1, C
L
= 1800 pF
Figure 1, C
L
= 1800 pF
Figure 1, C
L
= 1800 pF
28
32
32
38
60
60
100
100
nsec
nsec
nsec
nsec
Power Supply Current
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
2
3.5
0.3
mA
0.2
NOTE:
1. Switching times guaranteed by design.
相關(guān)PDF資料
PDF描述
TC4423MJA 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4424 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4424EPA 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
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