
4-236
TELCOM SEMICONDUCTOR, INC.
TYPICAL CHARACTERISTICS
(Cont.)
120
110
100
90
80
70
60
50
40
30
20
10
T
0
1
2
3
4
5
6
7
8
9
10
Propagation Delay vs. Input Amplitude
VDD = 10V
CLOAD = 10000V
tD2
tD1
INPUT (V)
50
–40 –20
0
20
A
40
60
80
100 120
–60
T
Propagation Delay vs. Temperature
45
40
35
30
25
20
tD2
tD1
103
102
–40 –20
0
20
40
60
80 100 120
–60
I
Q
T (°C)
J
Quiescent Supply Current vs. Temperature
VDD
6
4
6
8
10
DD
12
14
16
18
High-State Output Resistance
vs. Supply Voltage
R
D
TJ= 150° C
TJ= 25° C
DD
4
6
8
10
12
14
16
18
Low-State Output Resistance
vs. Supply Voltage
TJ= 150°C
TJ= 25°C
Crossover Energy vs. Supply Voltage
10
A
10
–6
–7
NOTE:
The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
10–8
4
6
8
10
12
14
16
18
V
INPUT = 1
INPUT = 0
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
R
D
TC4421
TC4422
9A HIGH SPEED MOSFET DRIVERS