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參數(shù)資料
| 型號： | TC3889 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 5W Packaged Self-Bias PHEMT GaAs Power FETs |
| 中文描述： | 5W包裝自偏置PHEMT的砷化鎵功率場效應(yīng)管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 162K |
| 代理商： | TC3889 |
Preliminary
TC3889
PRE.2_04/27/2005
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P 1/1
5W Packaged Self-Bias PHEMT GaAs Power FETs
FEATURES
5W Typical Output Power
12dB Typical Linear Power Gain at 2.0GHz
High Linearity:
IP3 = 47 dBm Typical
High Power Added Efficiency:
Nominal PAE of 35%
Breakdown Voltage: BV
DGO
≥
18V
Wg = 12 mm
100 % DC Tested
Suitable for High Reliability Application
DESCRIPTION
The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is
designed to provide the single power supply application. The flange ceramic package provides excellent
thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and
ground the source, which is suitable for oscillator, power amplifier application in a wide range of
commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.0 GHz)
Symbol
Output Power at 1dB Gain Compression Point
V
DS
= 10 V
Linear Power Gain
V
DS
= 10 V
Intercept Point of the 3
rd
-order Intermodulation
V
DS
= 10 V, *P
SCL
= 26 dBm
PAE
Power Added Efficiency at 1dB Compression Power
I
DS
Drain-Source Current at V
DS
= 10 V
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
= 6mA
R
th
Thermal Resistance
Note: *P
SCL
: Output Power of Single Carrier Level.
CONDITIONS
MIN
36
TYP
37
12
MAX
UNIT
dBm
dB
P
1dB
G
L
IP3
47
dBm
35
1300
22
2.7
%
mA
Volts
°
C/W
18
PHOTO ENLARGEMENT
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