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參數(shù)資料
| 型號(hào)： | TC221-40 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PDSO6 |
| 封裝： | WINDOWED, PLASTIC PACKAGE-6 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大?。?/td> | 216K |
| 代理商： | TC221-40 |
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TC221, TC225, TC227
SMALL-FORMAT CCD IMAGE SENSORS
SOCS037C – DECEMBER 1991 – REVISED AUGUST 1997
Copyright
1997, Texas Instruments Incorporated
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Full-Frame Operation
– 190 (H)
× 190 (V) Active Elements for TC221
– 285 (H)
× 285 (V) Active Elements for TC225
– 102 (H)
× 102 (V) Active Elements for TC227
Dark-Reference Pixels
9-m Square Pixels
Single-Phase Clocking
Low Dark Current
Dynamic Range... More Than 60 dB
High Photoresponse Uniformity
High Sensitivity
Low-Noise Operation
Solid State Reliability With No Residual
Imaging, Image Burn-In, Microphonics, or
Image Distortion
description
The TC221, TC225 and TC227 are full-frame
charge-coupled device (CCD) image sensors
designed specifically for medical and industrial
applications where ruggedness and small size are
required. The image-area diagonal measures
1.3 mm for the TC227, 2.4 mm for the TC221, and
3.63 mm for the TC225. The image sensors
contain, in addition to dark reference pixels, 190,
285, and 102 active lines with 190, 285, and 102
active
pixels
per
line,
respectively.
The
antiblooming feature is activated by supplying
clock pulses to the antiblooming gate, an integral
part of each image-sensing element. The charge
is converted to signal voltage at 9.5
V per
electron by a high-performance structure with
built-in automatic reset and a voltage-reference
generator. The signal is further buffered by a
low-noise two-stage source-follower amplifier to
provide high output-drive capability.
The TC221 and TC227 are supplied in 6-pin molded plastic packages; the TC225 is supplied in a 10-pin molded
plastic package. The glass window can be cleaned using any standard method for cleaning optical assemblies
or by wiping the surface with a cotton swab soaked in alcohol.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
TC225
TC221
TC227
10
9
8
7
6
1
2
3
4
5
1
2
3
6
5
4
SUB
OUT
ADB
SRG
ABG
IAG
TRG
SRG1
SRG2
ABG
IAG
SUB
OUT1
OUT2
ADB
NC
SRG
ABG
IAG
SUB
OUT
ADB
1
2
3
6
5
4
NC – No internal connection
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC22-15C5RE | 制造商:Vishay Sprague 功能描述:CAP 22UF 15VDC -20% TO 40% 5.84 X 3.3 X 7.87MM RDL 5.08MM - Bulk |
| TC22-15C5RM | 制造商:Vishay Sprague 功能描述:CAP 22UF 15VDC 20% 5.84 X 3.3 X 7.87MM RDL 5.08MM - Bulk |
| TC221SC | 制造商:Thomas Betts 功能描述:Exact Equal/ 1-5 Days |
| TC-221SC | 制造商:Thomas & Betts 功能描述:1/2 CONN,SSCREW,EMT,DC |
| TC-221-SC | 制造商:THOMAS & BETTS 功能描述: 制造商:Thomas & Betts 功能描述: |
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