
TC2201
REV.2_04/12/2004
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P 1 / 4
Plastic Packaged Low Noise PHEMT GaAs FETs
FEATURES
1.5 dB Typical Noise Figure at 12 GHz
High Associated Gain:
Ga = 7 dB Typical at 12 GHz
21.5 dBm Typical Power at 12 GHz
8 dB Typical Linear Power Gain at 12 GHz
Lg = 0.25
μ
m, Wg = 300
μ
m
100 % DC Tested
Low Cost Plastic Micro-X Package
DESCRIPTION
The TC2201 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT
Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC
tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
NF
Noise Figure at V
DS
= 4 V, I
DS
= 25 mA,
f
= 12GHz
G
a
Associated Gain at V
DS
= 4 V, I
DS
= 25 mA,
f
= 12GHz
Output Power at 1dB Gain Compression Point,
f
= 12GHz
V
DS
= 6 V, I
DS
= 40 mA
Linear Power Gain,
f
= 12GHz
V
DS
= 6 V, I
DS
= 40 mA
I
DSS
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
g
m
Transconductance at V
DS
= 2 V, V
GS
= 0 V
V
P
Pinch-off Voltage at V
DS
= 2 V, I
D
= 0.6mA
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
= 0.15mA
R
th
Thermal Resistance
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C)
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
DS
Drain Current
I
GS
Gate Current
P
in
RF Input Power, CW
P
T
Continuous Dissipation
T
CH
Channel Temperature
T
Storage Temperature
* For the tight control of the pinch-off voltage range, we divide TC2201 into 3 model numbers to fit customer design requirement
(1)TC2201P0710 : Vp = -0.7V to -1.0V (2)TC2201P0811 : Vp = -0.8V to -1.1V (3)TC2201P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
CONDITIONS
MIN
6
20.5
TYP
1.5
7
21.5
MAX
2
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°
C/W
P
1dB
G
L
7
9
8
90
100
-1.0*
12
80
Rating
7.0 V
-3.0 V
I
DSS
300
μ
A
17 dBm
400 mW
175
°
C
- 65
°
C
to +175
°
C
PHOTO ENLARGEMENT