4-192
TELCOM SEMICONDUCTOR, INC.
1A HIGH-SPEED MOSFET DRIVERS
TC1411
TC1411N
0
100
200
300
400
500
16
14
12
10
8
6
4
V
DD
(VOLTS)
Quiescent Supply Current
vs. Supply Voltage
T
A
= 25
°
C
I
S
μ
A
-40
-20
0
20
40
60
80
0
100
200
300
400
500
TEMPERATURE (
°
C)
Quiescent Supply Current
vs. Temperature
V
SUPPLY
= 16V
I
S
μ
A
V
IN
= 3V
V
IN
= 0V
V
IN
= 0V
V
IN
= 3V
1.1
1.2
1.3
1.4
1.5
1.6
16
14
12
10
8
6
4
V
DD
(VOLTS)
Input Threshold
vs. Supply Voltage
T
A
= 25
°
C
V
T
-40
-20
0
20
40
60
80
1.1
1.2
1.3
1.4
1.5
1.6
TEMPERATURE (
°
C)
Input Threshold
vs. Temperature
V
SUPPLY
= 16V
V
T
V
IH
V
IL
V
IL
V
IH
0
5
10
15
20
25
16
14
12
10
8
6
4
V
DD
(VOLTS)
High-State Output Resistance
R
d
Low-State Output Resistance
R
d
T
A
= –40
°
C
T
A
= 85
°
C
T
A
= 25
°
C
0
5
10
15
20
25
16
14
12
10
8
6
4
V
DD
(VOLTS)
T
A
= –40
°
C
T
A
=85
°
C
T
A
= 25
°
C
TYPICAL CHARACTERISTICS