參數(shù)資料
型號(hào): TBN6301S
廠商: Tachyonics CO,. LTD.
英文描述: NPN SILICON RF TRANSISTOR
中文描述: NPN硅射頻晶體管
文件頁數(shù): 3/6頁
文件大?。?/td> 232K
代理商: TBN6301S
Typical Characteristics ( T
A
= 25
, unless otherwise specified)
Page 3 of 6
http://www.tachyonics.co.kr
Dec. 2005.
Rev. 1.0
Preliminary Specification
TBN6301 series
0
25
50
75
100
125
150
0
50
100
150
200
C
C
Ambient Temperature, T
A
(
o
C)
Power Dissipation
vs. Ambient Temperature
DC Current Gain
vs. Collector Current
Collector Current
vs. Base to Emitter Voltage
0
1
2
3
4
5
6
7
0.8
1.0
1.2
1.4
f = 1 MHz
R
r
Collector to Base Voltage, V
CB
(V)
Reverse Transfer Capacitance
vs. Collector to Base Voltage
0.1
1
10
100
0
50
100
150
200
250
300
350
400
V
CE
= 3 V
D
F
Collector Current, I
C
(mA)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, V
BE
(V)
0
5
10
15
20
25
30
V
CE
= 3 V
C
C
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