參數(shù)資料
型號: TBN6301KF
廠商: Tachyonics CO,. LTD.
英文描述: NPN SILICON RF TRANSISTOR
中文描述: NPN硅射頻晶體管
文件頁數(shù): 2/6頁
文件大?。?/td> 232K
代理商: TBN6301KF
Electrical Characteristics
(T
A
= 25
)
Page 2 of 6
http://www.tachyonics.co.kr
Dec. 2005.
Rev. 1.0
Preliminary Specification
TBN6301 series
dB
9
7
V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
|S
21
|
2
Insertion Power Gain
GHz
7.5
6
V
CE
= 5 V, I
C
= 20 mA
250
50
V
CE
= 3 V, I
C
= 10 mA
h
FE
DC Current Gain
GHz
6
5
V
CE
= 3 V, I
C
= 10 mA
f
T
Gain Bandwidth Product
dB
9.5
7
V
CE
= 5 V, I
C
= 20 mA, f = 1 GHz
1.8
1.4
V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
NF
Noise Figure
0.5
V
CB
= 15 V, I
E
= 0 mA
I
CBO
Collector Cut-off Current
10
V
CE
= 8 V, I
B
= 0 mA
I
CEO
0.5
V
EB
= 2 V, I
C
= 0 mA
I
EBO
Emitter Cut-off Current
1.1
Typ.
Max.
pF
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
C
re
Reverse Transfer Capacitance
Unit
Min.
Test Conditions
Symbol
Parameter
h
FE
Classification
125 - 250
50 - 160
h
FE
Value
SB1
SB2
Marking
Available Package
Unit in mm
1.6
0.8, 0.8t
SOT523
TBN6301E
1.4
0.8, 0.6t
SOT623F
TBN6301KF
2.0
1.25, 1.0t
SOT323
TBN6301U
2.9
1.3, 1.2t
SOT23
TBN6301S
Dimension
Package
Product
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