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參數資料
| 型號： | TBN6301 |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SILICON RF TRANSISTOR |
| 中文描述： | NPN硅射頻晶體管 |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 232K |
| 代理商： | TBN6301 |
□
Electrical Characteristics
(T
A
= 25
℃
)
Page 2 of 6
http://www.tachyonics.co.kr
Dec. 2005.
Rev. 1.0
Preliminary Specification
TBN6301 series
dB
9
7
V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
|S
21
|
2
Insertion Power Gain
GHz
7.5
6
V
CE
= 5 V, I
C
= 20 mA
250
50
V
CE
= 3 V, I
C
= 10 mA
h
FE
DC Current Gain
GHz
6
5
V
CE
= 3 V, I
C
= 10 mA
f
T
Gain Bandwidth Product
dB
9.5
7
V
CE
= 5 V, I
C
= 20 mA, f = 1 GHz
1.8
1.4
V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
NF
Noise Figure
0.5
V
CB
= 15 V, I
E
= 0 mA
I
CBO
Collector Cut-off Current
10
V
CE
= 8 V, I
B
= 0 mA
I
CEO
0.5
V
EB
= 2 V, I
C
= 0 mA
I
EBO
Emitter Cut-off Current
1.1
Typ.
Max.
pF
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
C
re
Reverse Transfer Capacitance
Unit
Min.
Test Conditions
Symbol
Parameter
□
h
FE
Classification
125 - 250
50 - 160
h
FE
Value
SB1
SB2
Marking
□
Available Package
Unit in mm
1.6
ⅹ
0.8, 0.8t
SOT523
TBN6301E
1.4
ⅹ
0.8, 0.6t
SOT623F
TBN6301KF
2.0
ⅹ
1.25, 1.0t
SOT323
TBN6301U
2.9
ⅹ
1.3, 1.2t
SOT23
TBN6301S
Dimension
Package
Product
相關PDF資料 |
PDF描述 |
|---|---|
| TBN6301E | NPN SILICON RF TRANSISTOR |
| TBN6301KF | NPN SILICON RF TRANSISTOR |
| TBN6301S | NPN SILICON RF TRANSISTOR |
| TBN6301U | NPN SILICON RF TRANSISTOR |
| TC03VNB | PRECISION TEMPERATURE-TO-VOLTAGE CONVERTERS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TBN6301E | 制造商:AUK 制造商全稱:AUK corp 功能描述:Si NPN Transistor |
| TBN6301KF | 制造商:TACHYONICS 制造商全稱:TACHYONICS 功能描述:NPN SILICON RF TRANSISTOR |
| TBN6301S | 制造商:AUK 制造商全稱:AUK corp 功能描述:Si NPN Transistor |
| TBN6301U | 制造商:AUK 制造商全稱:AUK corp 功能描述:Si NPN Transistor |
| TBN6501U | 制造商:AUK 制造商全稱:AUK corp 功能描述:Si NPN Transistor |
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