參數(shù)資料
型號: TB31262F
廠商: Toshiba Corporation
英文描述: TOSHIBA Bi- CMOS Integrated Circuit Silicon Monolithic
中文描述: 東芝的Bi - CMOS硅單片集成電路
文件頁數(shù): 1/26頁
文件大?。?/td> 273K
代理商: TB31262F
TB31262F
2001-12-26
1
TOSHIBA Bi CMOS Integrated Circuit Silicon Monolithic
T B 3 1 2 6 2 F
RF 1chip IC for 900 MHz Cordless Telephone
One package involve three systems about RF, IF, and AF.
Involving LNA, MIX, PA, VCO (TX,RX), PLL, IF -AMP, Detecter,
Compander,and 4 useful audio amplifiers. It is possible to reduce
many external parts. This IC is suitable for ISM 900 MHz
cordless telephone.
Features
Same system & software almost compatible as TB31261AF
(Single Conversion, IF Frequency: 10.7 MHz,)
Built-in LNA
Built-in 1’st MIX
Double Balanced MIX (DBM) Type.
Built-in Differential V CO, Variable capacitor (TX, RX) and
Doubler (450 MHz
×
2)
Built-in PA
A substitution from TB31261AF is easy
(Same package, Software almost compatible)
Low operating voltage: V
CC
=
2.0~5.0 V
Current operating current: I
CC
=
70 mA (All On)
PLL operating frequency :around 450 MHz
Serial control for all status
Built in pre-amp, receiver-amp, mic-amp, and spl-amp
Receiver output Level adjustment.
Variable battery alarm setting. (7 thresholds)
Built in battery saving function for Intermittent receiving.
Small package: QFP52pin (0.65 mm pitch)
Handle with care to prevent devices from deterioration by static electricity.
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