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ELECTRICAL CHARACTERISTICS
SLOS514A – FEBRUARY 2007 – REVISED JULY 2007
Test conditions (unless otherwise noted): TCase = 25°C, PVDD = 14.4 V, RL = 4 , fS = 417 kHz, Rext = 20 k, master mode
operation (see application diagram)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OPERATING CURRENT
IPVDD_IDLE
All four channels running in MUTE mode
240
300
PVDD idle current
mA
IPVDD_Hi-Z
All four channels in Hi-Z mode
80
IPVDD_STBY
PVDD standby current
STANDBY mode, TJ ≤ 85°C
2
20
μA
OUTPUT POWER
4
, PVDD = 14.4V, THD+N ≤ 1%, 1 kHz, T
c = 75°C
23
4
, PVDD = 14.4V, THD+N = 10%, 1 kHz, T
c = 75°C
25
28
4
, PVDD = 14.4V, square wave, 1 kHz, T
c = 75°C
43
4
, PVDD = 21 V, THD+N = 1%, 1 kHz, T
c = 75°C
47
4
, PVDD = 21 V, THD+N = 10%, 1 kHz, T
c = 75°C
50
58
2
, PVDD = 14.4V, THD+N = 1%, 1 kHz, T
c = 75°C
38
POUT
Output power per channel
W
2
, PVDD = 14.4V, THD+N = 10%, 1 kHz, T
c = 75°C
40
45
2
, PVDD = 14.4 V, square wave 1 kHz, T
c = 75°C
70
PBTL 2-
operation, PVDD = 21 V, THD+N = 10%,
116
1 kHz, Tc = 75°C
PBTL 1-
operation, PVDD = 14.4 V, THD+N = 10%,
90
1 kHz, Tc = 75°C
4 channels operating, 23W output power/ch, L = 10
μH,
EFFP
Power efficiency
90%
TJ ≤ 85°C
AUDIO PERFORMANCE
VNOISE
Noise voltage at output
G = 26 dB, zero input, AES17 filter, and A-weighting
60
100
μV
Crosstalk
Channel crosstalk
1W, G = 26 dB, 1 kHz
60
75
dB
CMRR5424
Common-mode rejection ratio (TAS5424)
1 kHz, 1 Vrms referenced to SGND, G = 26 dB
60
75
dB
PSRR
Power supply rejection ratio
G = 26 dB, PVDD = 14.4 Vdc + 1 Vrms, f = 1 kHz
60
75
dB
THD+N
Total harmonic distortion + noise
P = 1 W, G = 26 dB, f = 1 kHz, 0
°C ≤ T
J ≤ 75°C
0.02%
0.1%
336
357
378
Switching frequency selectable for AM interference
fS
Switching frequency
392
417
442
kHz
avoidance
470
500
530
RAIN
Analog input resistance
Internal shunt resistance on each input pin
60
80
100
k
AC-coupled common-mode input voltage (zero
VIN_CM
Common-mode input voltage (non-clipping)
1.3
Vrms
differential input)
VCM_INT
Internal common-mode input bias voltage
Internal bias applied to IN_M pin
3.25
V
11
12
13
19
20
21
G
Voltage gain (VO/VIN)
Source impedance = 0
dB
25
26
27
31
32
33
GCH
Channel-to-channel variation
Any gain commanded
–1
0
1
dB
tCM
Output-voltage common-mode ramping time
35
ms
tGAIN
Gain ramping time
External CMUTE = 330 nF
30
ms
PWM OUTPUT STAGE
RDSon
FET Drain-to-source resistance
Not including bond wire resistance, TJ = 25°C
75
95
m
VO_OFFSET
Output offset voltage
Zero input signal and G = 26 dB
±10
±25
mV
PVDD OVER VOLTAGE (OV) PROTECTION
VOV
PVDD over voltage shutdown
22.1
23.7
26.3
V
LOAD DUMP (LD) PROTECTION
VLD_SD_SET
Load-dump shutdown voltage
26.6
29
32
V
VLD_SD_CLEAR
Recovery voltage for load-dump shutdown
23.5
26.4
28.4
V
PVDD UNDER VOLTAGE (UV) PROTECTION
VUV_SET
PVDD under voltage shutdown
6.5
7
7.5
V
VUV_CLEAR
Recovery voltage for PVDD UV
7
7.5
8
V
8