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參數(shù)資料
| 型號(hào)： | TAR8H04K |
| 廠商： | Toshiba Corporation |
| 英文描述： | Dual Low-Dropout Regulator |
| 中文描述： | 雙低壓差穩(wěn)壓器 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 177K |
| 代理商： | TAR8H04K |
TAR8H04K
2007-11-01
2
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Supply Voltage
V
IN
12
V
Output Current (A-channel)
I
OUT
(A)
100
Output Current (B-channel)
I
OUT
(B)
150
mA
200 (Note 1)
Power Dissipation
P
D
400
(Note 2)
mW
Operation Temp. Range
T
opr
40 to 85
°C
Storage Temp. Range
T
stg
55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit Rating
Note 2: Mounted on a glass epoxy circuit board of 30
×
30 mm Pad dimension of 70 mm
2
Electrical Characteristics
(unless otherwise specified, V
IN
=
3.6 V, C
IN
=
1
μ
F, C
OUT
=
10
μ
F,
C
NOISE
=
0.01
μ
F, V
CT
=
3.6 V, T
j
=
25°C)
2.5 V Output Characteristics
(
V
OUT
(A)
)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output Voltage
V
OUT
(A)
I
OUT
(A)
=
30 mA
2.43
2.5
2.57
V
Dropout Voltage
V
IN
-V
OUT
(A) V
IN
=
2.3 V, I
OUT
(A)
=
30 mA
130
200
mV
Load Regulation
Reg
load (A) I
OUT
(A)
=
0 mA to 30 mA
10
30
mV
Line Regulation
Reg
line (A)
V
IN
=
4.0 V to 8.0 V
1
20
mV
Temp. Coefficient
T
CVO
(A)
Ta
=
40
°
C to 85
°
C
100
ppm/
°
C
R.R.
1
(A)
V
IN
=
5.0 V, I
OUT
(A)
=
10 mA,
f
=
200 Hz, V
Ripple
=
1 V
p-p
,
Ta
=
25
°
C
65
dB
Ripple Rejection
R.R.
2
(A)
V
IN
=
5.0 V, I
OUT
(A)
=
10 mA,
f
=
200 kHz, V
Ripple
=
1 V
p-p
,
Ta
=
25
°
C
50
dB
Output Noise Voltage
V
NO
(A)
I
OUT
(A)
=
10 mA,
10 Hz
<
f
<
10 kHz, Ta
=
25
°
C
30
μ
V
rms
Output Rise Time
t
rise
(A)
I
OUT
(A)
=
30 mA,
V
CT
=
0 V
→
3 V (t
r
=
10 ns)
1
ms
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