參數(shù)資料
型號(hào)： TAR5S15_07
廠商： Toshiba Corporation
英文描述： Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 1.9 to 2.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
中文描述： 點(diǎn)穩(wěn)壓器（低壓差穩(wěn)壓器）
文件頁(yè)數(shù)： 7/23頁(yè)
文件大小： 391K
代理商： TAR5S15_07
TAR5S15~TAR5S50
2007-11-01
7
5. Example of Characteristics when Ceramic Capacitor is Used
Shown below is the stable operation area, where the output voltage does not oscillate, evaluated using a
Toshiba evaluation circuit. The equivalent series resistance (ESR) of the output capacitor and output current
determines this area. TAR5Sxx Series devices operate stably even when a ceramic capacitor is used as the
output capacitor.
If a ceramic capacitor is used as the output capacitor and the ripple frequency is 30 kHz or more, the ripple
rejection differs from that when a tantalum capacitor is used. This is shown below.
Toshiba recommend that users check that devices operate stably under the intended conditions of use.
Examples of safe operating area characteristics
(TAR5S15) Stable Operating Area
100
Evaluation Circuit for Stable Operating Area
Ripple Rejection Characteristic (f
=
10 kHz~300 kHz)
(TAR5S30) Ripple Rejection – f
70
Ceramic 10
μ
F
Tantalum10
μ
F
Output current IOUT (mA)
(TAR5S28) Stable Operating Area
100
(TAR5S50) Stable Operating Area
Output current IOUT (mA)
Output current IOUT (mA)
E
Ω
)
E
Ω
)
E
Ω
)
R
Frequency f (Hz)
TAR5S
**
GND
C
IN
Ceramic
V
IN
=
V
OUT
+
1 V
CONTROL
C
NOISE
=
0.01
μ
F
R
OUT
ESR
C
OUT
Ceramic
Capacitors used for evaluation
Made by Murata C
IN
: GRM40B105K
C
OUT
: GRM40B105K/GRM40B106K
30
0
10 k
10
20
40
50
60
Ceramic
2.2
μ
F
Ceramic
1
μ
F
300 k
100 k
Tantalum 2.2
μ
F
Tantalum 1
μ
F
@VIN
=
4.0 V, CNOISE
=
0.01
μ
F,
CIN
=
1
μ
F, Vripple
=
500 mVp-p,
Iout
=
10 mA, Ta
=
25°C
1000 k
80
40
0.02
0.1
1
10
0
20
150
60
120
100
140
@VIN
=
2.5 V, CNOISE
=
0.01
μ
F,
CIN
=
1
μ
F, Cout
=
1
μ
F~10
μ
F,
Ta
=
25°C
Stable Operating Area
80
40
0.02
0.1
1
10
100
0
20
150
60
120
100
140
@VIN
=
6.0 V, CNOISE
=
0.01
μ
F,
CIN
=
1
μ
F, Cout
=
1
μ
F~10
μ
F,
Ta
=
25°C
Stable Operating Area
80
40
0.02
0.1
1
10
0
20
150
60
120
100
140
@VIN
=
3.8 V, CNOISE
=
0.01
μ
F,
CIN
=
1
μ
F, Cout
=
1
μ
F~10
μ
F,
Ta
=
25°C
Stable Operating Area
相關(guān)PDF資料
PDF描述
TAR5S16 Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
TAR5S17 Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 2.5 to 2.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
TAR5S19 Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
TAR5S24 Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 4.6 to 5.0; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
TAR5S26 Point Regulators (Low-Dropout Regulator)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TAR5S15U 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Point Regulators (Low-Dropout Regulator)
TAR5S16 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Point Regulators (Low-Dropout Regulator)
TAR5S16U 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Point Regulators (Low-Dropout Regulator)
TAR5S17 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Point Regulators (Low-Dropout Regulator)
TAR5S17U 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Point Regulators (Low-Dropout Regulator)
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