參數(shù)資料
型號(hào)： TA8428F
廠(chǎng)商： Toshiba Corporation
英文描述： TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
中文描述： 東芝雙極線(xiàn)性集成電路硅單片
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 233K
代理商： TA8428F
TA8428K(S)/F
2001-06-13
5
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Supply Voltage
V
CC
30
V
Input Voltage
V
IN
0.3~V
CC
V
PEAK
I
O
(PEAK)
3.0 (Note 1)
K (S) type
AVE.
I
O
(AVE.)
1.5
PEAK
I
O
(PEAK)
2.4 (Note 1)
Output
Current
F type
AVE.
I
O
(AVE.)
0.8
A
1.25 (Note 2)
K (S) type
P
D
10.0 (Note 3)
1.9 (Note 4)
Power Dissipation
F type
P
D
2.5 (Note 5)
W
Operating Temperature
T
opr
30~85
°C
Storage Temperature
T
stg
55~150
°C
Note 1: t = 100 ms
Note 2: No heat sink
Note 3: Tc = 85°C
Note 4: This value is obtained by 30 × 30 × 1.6 mm PCB mounting occupied copper area in excess of 60%
Note 5: This value is obtained by 50 × 50 × 1.6 mm PCB mounting occupied copper area in excess of 60%
ELECTRICAL CHARACTERISTICS
(V
CC
= 24 V, Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST
CIR
CUIT
Test Condition
MIN
TYP.
MAX
UNIT
I
CC1
Stop mode
―
8
15
I
CC2
Forward / reverse mode
―
35
85
Quiescent Current
I
CC3
1
Brake mode
―
16
30
mA
V
IL
―
―
―
0.8
Input Voltage
V
IH
2
―
2.0
―
―
V
I
IL
V
IN
= GND
―
―
50
Input Current
I
IH
2
V
IN
= V
CC
―
―
10
μA
K (S) type
I
O
= 1.5 A, Tc = 25 C
―
2.2
2.9
Output Saturation
Voltage
F type
V
sat
(total)
3
I
O
= 0.8 A, Tc = 25 C
―
1.8
2.5
V
I
LU
―
―
50
Output Leakage Current
I
LL
4
V
L
= 25 V
―
―
50
μA
I
LU
―
2.6
―
K (S) type
I
LL
I
F
= 1.5 A
―
1.5
―
I
LU
―
2.2
―
Diode Forward Voltage
F type
I
LL
4
I
F
= 0.8 A
―
1.2
―
V
Thermal Shutdown Circuit
Operating Temperature
T
SD
―
―
―
150
―
°C
t
pLH
2
―
―
1
―
Propagation Delay Time
t
pHL
2
―
―
1
―
μs
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