參數(shù)資料
型號(hào): TA449xxW
廠商: Dynex Semiconductor Ltd.
英文描述: Asymmetric Thyristor
中文描述: 不對(duì)稱(chēng)晶閘管
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 146K
代理商: TA449XXW
TA449..W
2/12
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.133
Anode dc
Clamping force 5.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.02
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
4.5
5.5
kN
-40
150
o
C
-
On-state (conducting)
-
135
o
C
-
0.04
o
C/W
o
C/W
Cathode dc
-
0.154
o
C/W
Double side cooled
-
0.07
o
C/W
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 600A peak, T
case
= 125
o
C
I
RRM
Peak reverse current
At V
RRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
5
μ
s.
dV/dt
Maximum linear rate of rise of off-state voltage
To 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Typ.
Max.
Units
-
2.9
V
-
40
mA
-
1000
V/
μ
s
-
1000
A/
μ
s
Rate of rise of on-state current
dI/dt
t
q
Max. turn-off time
VR = DF451 voltage drop,
T
= 125
o
C, I
TM
= 200A,
dV/dt = 400V/
μ
s (linear to 60% V
DRM
),
tdI
R
/dt = 30A/
μ
s Gate open.
10
-
μ
s
I
DRM
Off-state current
At V
DRM
, T
case
= 125
o
C
-
1
mA
Non-repetitive
-
500
A/
μ
s
Repetitive
t
gt
Typ. turn-on time (total)
T
j
= 25
o
C, I
T
= 50A,
V
D
= 300V, I
G
= 1A, dI/dt = 50A/
μ
s,
dI
G
/dt = 1A/
μ
s
-
3
μ
s
I
H
Holding current
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
-
80
mA
I
L
Latching current
T
j
= 25
o
C, I
G
= 0.5A, V
D
= 12V
-
300
mA
t
gd
Typ. delay time
-
1.5
μ
s
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