參數(shù)資料
型號(hào)： T8XX-XXXG
廠商： 意法半導(dǎo)體
英文描述： 8A TRIACS
中文描述： 8A條雙向可控硅
文件頁(yè)數(shù)： 2/11頁(yè)
文件大小： 133K
代理商： T8XX-XXXG
BTA08, BTB08 and T8 Series
2/11
Table 3: Absolute Maximum Ratings
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
■
SNUBBERLESS and Logic Level (3 quadrants)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine
wave)
IPAK/D
2
PAK/
DPAK/TO-220AB
T
c
= 110°C
8
A
TO-220AB Ins.
T
c
= 100°C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25°C)
F = 50 Hz
t = 20 ms
80
A
F = 60 Hz
t = 16.7 ms
84
I
2
t
I
2
t Value for fusing
t
p
= 10 ms
36
A
2
s
dI/dt
Critical rate of rise of on-state cur-
rent I
G
= 2 x I
GT
, t
r
≤
100 ns
F = 120 Hz
T
j
= 125°C
50
A/μs
I
GM
Peak gate current
t
p
= 20 μs
T
j
= 125°C
4
A
P
G(AV)
Average gate power dissipation
T
j
= 125°C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Symbol
Test Conditions
Quad-
rant
T8
BTA08 / BTB08
Unit
T810 T835
TW
SW
CW
BW
I
GT
(1)
V
D
= 12 V R
L
= 30
I - II - III
MAX.
10
35
5
10
35
50
mA
V
GT
I - II - III
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
T
j
= 125°C
I - II - III
MIN.
0.2
V
I
H
(2)
I
T
= 100 mA
MAX.
15
35
10
15
35
50
mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
25
50
10
25
50
70
mA
II
30
60
15
30
60
80
dV/dt (2)
V
D
= 67 %V
DRM
gate open
T
j
= 125°C
MIN.
40
400
20
40
400
1000 V/μs
(dI/dt)c (2)
(dV/dt)c = 0.1 V/μs T
j
= 125°C
MIN.
5.4
-
3.5
5.4
-
-
A/ms
(dV/dt)c = 10 V/μs T
j
= 125°C
2.8
-
1.5
2.98
-
-
Without snubber T
j
= 125°C
-
4.5
-
-
4.5
7
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