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參數(shù)資料
| 型號： | T835-600G-TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8A TRIACS |
| 中文描述： | 8A條雙向可控硅 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 47K |
| 代理商： | T835-600G-TR |
1/10
BTA/BTB08 and T8 Series
SNUBBERLESS
, LOGIC LEVEL & STANDARD
8A TRIAC
S
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB08 and T8 triac series is
suitable for general purpose AC switching. They
can
be
used
as
an
applications
such
as
regulation, induction motor starting circuits... orfor
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T8
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated
at
2500V
RMS)
standards (File ref.: E81734)
ON/OFF
static
function
in
relays,
heating
complying
with
UL
Symbol
Value
Unit
I
T(RMS)
8
A
V
DRM
/V
RRM
600 and 800
V
I
GT (Q
1
)
5 to 50
mA
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
DPAK / D PAK
IPAK / TO-220AB
Tc = 110
°
C
8
A
TO-220AB Ins.
Tc = 100
°
C
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25
°
C)
F = 50 Hz
t = 20 ms
80
A
F = 60 Hz
t = 16.7 ms
84
I t
I t Value for fusing
tp = 10 ms
45
A s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
F = 120 Hz
Tj = 125
°
C
50
A/
μ
s
I
GM
Peak gate current
tp = 20
μ
s
Tj = 125
°
C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125
°
C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
G
A2
A1
G
A2
A2
A1
A2
A2
G
A1
A2
A2
A1
G
D
2
PAK
(T8-G)
IPAK
(T8-H)
A2
A2
G
A1
G
A2
A1
TO-220AB Insulated
(BTA08)
TO-220AB
(BTB08)
DPAK
(T8-B)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T835-600H | 8A TRIACS |
| T835-600H-TR | 8A TRIACS |
| T835-800B | 8A TRIACS |
| T835-800B-TR | 8A TRIACS |
| T835-800G | 8A TRIACS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T835-600H | 功能描述:IGBT 晶體管 Snubberless Logic Lv Standard 8A Triac RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| T835-600H-TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Snubberless?, logic level and standard 8 A Triacs |
| T835-600R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8A TRIACS |
| T835-600R-TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8A TRIACS |
| T835-800B | 制造商:STMicroelectronics 功能描述:THYRISTOR TRIAC 800V 84A 3PIN DPAK - Rail/Tube |
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