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參數(shù)資料
| 型號(hào)： | T830-xxxW |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SNUBBERLESS TRIAC |
| 中文描述： | 緩沖器可控硅 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 108K |
| 代理商： | T830-XXXW |
T820-xxxW / T830-xxxW
2/5
P
G (AV)
= 1 W P
GM
= 10 W (tp = 20
μ
s)
I
GM
= 4 A (tp = 20
μ
s
GATE CHARACTERISTICS
(maximum values)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
50
°C/W
Rth(j-c)
Junction to case for A.C (360° conduction angle)
3.1
°
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Quadrant
T820
T830
Unit
I
GT
V
D
=12V (DC) R
L
=33
Tj= 25°C
I-II-III
MAX
20
30
mA
V
GT
V
D
=12V (DC) R
L
=33
Tj= 25
°
C
I-II-III
MAX
1.5
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj= 125°C
I-II-III
MIN
0.2
V
tgt
V
D
=V
DRM
dl
G
/dt= 3A
μ
s
I
G
=500mA
Tj= 25°C
I-II-III
TYP
2
μ
s
I
H
*
I
T
= 100mA
Gate open
Tj= 25
°
C
MAX
35
50
V
TM
*
I
TM
= 11A tp= 380
μ
s
Tj= 25
°
C
MAX
1.5
V
I
DRM
I
RRM
VDRM rated
V
RRM
rated
Tj= 25
°
C
MAX
10
μ
A
Tj= 125°C
MAX
2
mA
dV/dt *
Linear slope up to
V
D
=67%V
DRM
Gate open
Tj= 125
°
C
MIN
200
300
V/
μ
s
(dV/dt)c *
(dI/dt)c = 4.5 A/ms (see note)
Tj= 125
°
C
MIN
10
20
V/
μ
s
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note :
In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/
μ
s, and, therefore, it is
unnecessary
to use
a snuber R-C network accross T820W / T830W triacs.
ELECTRICAL CHARACTERISTICS
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參數(shù)描述 |
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