參數(shù)資料
型號: T829N20TOF
元件分類: 晶閘管
英文描述: 1800 A, 2000 V, SCR
文件頁數(shù): 1/29頁
文件大小: 701K
代理商: T829N20TOF
Technische Information / Technical Information
T 829 N 20 ...26
Netz-Thyristor
Phase Control Thyristor
N
Elektrische Eigenschften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Vorwrts- und Rückwrts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
T
vj
= - 40°C...T
vj max
V
DRM
, V
RRM
2000
2400
2200
2600
V
V
1)
Vorwrts-Stospitzensperrspannung
non-repetitive peak foward off-state voltage
T
vj
= - 40°C...T
vj max
V
DSM
2000
2400
2200
2600
V
V
Rückwrts-Stospitzensperrspannung
non-repetitive peak reverse voltage
T
vj
= + 25°C...T
vj max
V
RSM
2100
2500
2300
2700
V
V
Durchlastrom-Grenzeffektivwert
RMSM on-state current
I
TRSMSM
1800
A
Dauergrenzstrom
average on-state current
T
C
= 85 °C
T
C
= 60 °C
I
TAVM
829
1145
A
A
Stostrom-Grenzwert
surge current
T
vj
= 25°C, t
p
= 10 ms
T
vj
= T
vj max
, t
p
= 10 ms
I
TSM
17500
15500
A
A
A2s *10
3
A2s *10
3
Grenzlastintegral
I2t-value
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
I2t
1531
1201
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 747-6
f=50 Hz, v
L
= 10V, i
GM
= 1 A
di
G
/dt = 1 A/μs
(di
T
/dt)
cr
50
A/μs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5.Kennbuchstabe / 5th letter F
(dv
D
/dt)
cr
1000
V/μs
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
T
vj
= T
vj max
, i
T
= 1800 A
v
T
max.
1,78
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
T(TO)
0,95
V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
0,425
m
Durchlakennlinie
on-state voltage
v
T
= A + B x i
T
+ C x ln (i
T
+ 1) + D x
i
T
T
vj
= T
vj max
A= 1,0069
B= 3,381E-04
C=-0,02723
D= 8,5423E-03
Zündstrom
gate trigger current
T
vj
= 25°C, v
D
= 6 V
I
GT
max.
250
mA
Zündspannung
gate trigger voltage
T
vj
= 25°C, v
D
= 6V
V
GT
max.
1,5
V
Nicht zündener Steuerstrom
gate non-trigger current
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
,v
D
= 0,5 V
DRM
I
GD
max.
max.
10
5
mA
mA
Nicht zündene Steuerspannung
gate non-trigger voltage
T
vj
= T
vj max
,v
D
= 0,5 V
DRM
V
GD
max.
0,2
mV
Haltestrom
holding current
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
I
H
max.
600
mA
Einraststrom
latching current
T
vj
= 25°C, v
D
= 6 V, R
GK>
= 10
I
L
i
GM
= 1 A, di
G
/dt = 1 A/μs
t
g
= 20 μs
max.
2000
mA
Vorwrts- und Rückwrts-Sperrstrom
forward off-state and reverse currents
T
vj
= T
vj max
v
D
= V
DRM
, vR = V
RRM
i
D
, i
R
max.
100
mA
Zündverzug
gate controlled delay time
DIN IEC 747-6
T
vj
= 25°C
i
GM
= 1 A, di
G
/dt = 1 A/μs
t
gd
max.
4
μs
SZ-AM / 99-09-10, K.-A.Rüther
A 122/99
Seite/page 1
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