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參數(shù)資料
| 型號(hào)： | T820-XXXW |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 108K |
| 代理商： | T820-XXXW |
T820-xxxW / T830-xxxW
3/5
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
180
O
= 180
o
= 120
o
= 90
o
o
= 60
= 30
o
T(RMS)
I
(A)
P(W)
Fig. 1:
Maximum power dissipation versus RMS
on-state current.
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0
2
4
6
8
10
= 180
o
Tcase( C)
I
(A)
T(RMS)
Fig. 3:
RMS on-state current versus case temper-
ature.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt
Tj( C)
o
Ih
-40
-20
0
20
40
60
80
100
120
140
Igt[Tj]
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 C]
Fig. 5:
Relative variation of gate trigger current
and holding current versus junction temperature.
P (W)
0
10 20 30 40 50 60 70 80 90 100110120130
0
2
4
6
8
10
-90
-95
-100
-105
-110
-115
-120
-125
Rth = 0 C/W
2.5 C/W
5 C/W
7.5 C/W
Tamb ( C)
Tcase ( C)
o
Fig. 2:
Correlation between maximum power dissi-
pation
and
maximum
(TambandTcase)fordifferentthermalresistances
heatsink + contact.
allowable
temperature
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.1
1
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig. 4:
Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
1
10
100
1000
0
20
40
60
80
100
Tj initial = 25 C
Number of cycles
I
(A)
TSM
Fig. 6:
Non repetitive surge peak on-state current
versus number of cycles.
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