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參數(shù)資料
| 型號(hào)： | T810-XXXB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH PERFORMANCE TRIACS |
| 中文描述： | 高性能雙向可控硅 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 102K |
| 代理商： | T810-XXXB |
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
P(W)
α
α
α
α
α
I
(A)
T(RMS)
180°
α
α
Fig 1a:
Maximum power dissipation versus RMS
on-state current (T810 only).
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
P(W)
α
α
α
α
α
I
(A)
T(RMS)
180°
α
α
Fig 1b:
Maximum power dissipation versus RMS
on-state current. (T835 only)
0
25
50
75
100
125
0
2
4
6
8
10
P(W)
Tcase (°C)
Rth=0°C/W
Rth=5°C/W
Rth=10 °C/W
Rth=15 °C/W
125
110
120
115
α
Tamb(°C)
Fig 2:
Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink+contact.
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
I
(A)
T(RMS)
α
Tamb(°C)
Fig 3:
RMS on-state current versus ambient tem-
perature.
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
K=[Zth(j-c)/Rth(j-c)]
tp(s)
Fig 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
I
GT H
GT H
I
H
Tj(°C)
I
GT
Fig 5:
Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
T810-xxxB / T835-xxxB
3/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T835-600G | HIGH PERFORMANCE TRIAC |
| T835-600 | HIGH PERFORMANCE TRIAC |
| T850-600G | HIGH PERFORMANCE TRIAC |
| T912-B400K-010-10 | Type T912 and T914 Precision Resistor Networks |
| T912-A500K-100-02 | Type T912 and T914 Precision Resistor Networks |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T810-XXXG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8A TRIACS |
| T810-XXXH | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8A TRIACS |
| T8110 | 制造商:AGERE 制造商全稱:AGERE 功能描述:Version History |
| T811004 | 制造商:E-SWITCH 制造商全稱:E-SWITCH 功能描述:E-SWITCH 800SP9B5M2QE |
| T-8110---BAL-DB | 制造商:LSI Corporation 功能描述:Switch Fabric 4K x 4K 3.3V 272-Pin BGA |
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