參數(shù)資料
型號(hào): T810-600H
廠商: 意法半導(dǎo)體
英文描述: 8A TRIACS
中文描述: 8A條雙向可控硅
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 47K
代理商: T810-600H
BTA/BTB08 and T8 Series
2/10
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise specified)
SNUBBERLESS
and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
STANDARD (4 Quadrants)
Symbol
STATIC CHARACTERISTICS
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Quadrant
T8
BTA/BTB08
Unit
T810
T835
TW
SW
CW
BW
I
GT
(1)
V
GT
V
GD
V
D
= 12 V
R
L
= 30
I - II - III
MAX.
10
35
5
10
35
50
mA
I - II - III
MAX.
1.3
V
V
D
= V
DRM
Tj = 125
°
C
I
T
= 100 mA
I
G
= 1.2 I
GT
R
L
= 3.3 k
I - II - III
MIN.
0.2
V
I
H
(2)
I
L
MAX.
15
35
10
15
35
50
mA
I - III
II
MAX.
25
30
50
60
10
15
25
30
50
60
70
80
mA
dV/dt (2)
V
D
= 67 %V
DRM
gate open
Tj = 125
°
C
(dV/dt)c = 0.1 V/
μ
s
(dV/dt)c = 10 V/
μ
s
Without snubber
MIN.
40
400
20
40
400
1000
V/
μ
s
(dI/dt)c (2)
Tj = 125
°
C
Tj = 125
°
C
Tj = 125
°
C
MIN.
5.4
2.8
-
-
-
3.5
1.5
-
5.4
2.8
-
-
-
-
-
7
A/ms
4.5
4.5
Test Conditions
Quadrant
BTA/BTB08
Unit
C
25
50
B
50
100
I
GT
(1)
V
D
= 12 V
R
L
= 30
I - II - III
IV
MAX.
mA
V
GT
V
GD
I
H
(2)
I
L
ALL
MAX.
1.3
V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
R
L
= 3.3 k
Tj = 125
°
C
ALL
MIN.
0.2
V
MAX.
25
50
mA
I - III - IV
II
MAX.
40
80
50
100
mA
dV/dt (2)
V
D
= 67 %V
DRM
gate open Tj = 125
°
C
(dV/dt)c (2) (dI/dt)c = 3.5 A/ms
MIN.
200
400
V/
μ
s
V/
μ
s
Tj = 125
°
C
MIN.
5
10
Symbol
Test Conditions
Value
Unit
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 11 A
tp= 380
μ
s
Tj = 25
°
C
Tj = 125
°
C
Tj = 125
°
C
Tj = 25
°
C
Tj = 125
°
C
MAX.
1.55
V
Threshold voltage
MAX.
0.85
V
Dynamic resistance
MAX.
50
m
μ
A
V
DRM
= V
RRM
MAX.
5
1
mA
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