參數(shù)資料
型號(hào): T436416A-8S
廠商: TM Technology, Inc.
英文描述: 4M X 16 SDRAM
中文描述: 4米× 16內(nèi)存
文件頁數(shù): 23/29頁
文件大?。?/td> 712K
代理商: T436416A-8S
TE
CH
tm
Read Interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length=Full Page
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T436416A
TM Technology Inc. reserves the right
P.23
to change products or specifications without notice.
Publication Date: MAY. 2003
Revision: B
C L O C K
C K E
C S
R A S
C A S
A D D R
B A
A 10 /A P
C L = 2
C L = 3
W E
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
H IG H
D Q M
D Q
:D o n't care
R A a
C A a
C A b
R A a
Q A a0
Q A a1
Q A a2
Q A a3
Q A a4
Q A a0
Q A a1
Q A a2
Q A a3
Q A a4
Q A b 0
Q A b 0
Q A b 1
Q A b 1
Q A b 2
Q A b 3
Q A b 2
Q A b 4
Q A b 3
Q A b 5
Q A b 4
Q A b 5
* N o te2
1
2
2
1
R o w A c tiv e
(A -B a n k )
R ead (A -
B an k )
R ead (A -
B an k )
B u rst S to p
P rech arg e
(A -B a n k )
*Note : 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the lable 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of ‘Full Page write burst stop cycle’.
3. Burst stop is valid at every burst length.
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