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參數(shù)資料
| 型號(hào)： | T435-xxxB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4A TRIACS |
| 中文描述： | 第4A雙向可控硅 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | T435-XXXB |
T4 Series
4/8
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2-1:
RMS on-state current case versus tem-
perature (full cycle).
Fig. 2-2:
RMS on-state current versus ambient
temperature (printed circuit FR4, copper thick-
ness: 35μm),full cycle.
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5:
Surge peak on-state current versus
number of cycles.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
P(W)
IT(RMS)(A)
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Tc(°C)
IT(RMS)(A)
TO-220AB/DPAK/IPAK
ISOWATT220AB
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tamb(°C)
IT(RMS)(A)
DPAK
(S=0.5cm2)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
1E-2
1E-1
1E+0
K=[Zth/Rth]
Rth(j-c)
Rth(j-a)
TO-220AB/DPAK/IPAK
ISOWATT220AB
DPAK/IPAK
TO-220AB/ISOWATT220AB
tp(s)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
Tj(°C)
1
10
100
1000
0
5
10
15
20
25
30
35
ITSM(A)
Non repetitive
Tj initial=25°C
Repetitive
Tc=110°C
One cycle
t=20ms
Number of cycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T435-xxxH | 4A TRIACS |
| T435-xxxT | 4A TRIACS |
| T435-xxxW | 4A TRIACS |
| T405-xxxT | 4A TRIACS |
| T405-xxxW | 4A TRIACS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T435-XXXB-TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:T4 Series 4A TRIACS |
| T435-XXXH | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:T4 Series 4A TRIACS |
| T435-XXXT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:T4 Series 4A TRIACS |
| T435-XXXW | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:T4 Series 4A TRIACS |
| T436416A | 制造商:TMT 制造商全稱:TMT 功能描述:4M X 16 SDRAM |
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