參數(shù)資料
型號(hào): T40xxxKS
廠商: 意法半導(dǎo)體
英文描述: Standard Triacs(標(biāo)準(zhǔn)雙向可控硅)
中文描述: 標(biāo)準(zhǔn)雙向(標(biāo)準(zhǔn)雙向可控硅)
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 62K
代理商: T40XXXKS
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
180
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
T(RMS)
I
(A)
P(W)
Fig.1 :
Maximum RMS power dissipation versus
RMS on-state current.
0
10 20 30 40 50 60 70 80 90 100 110120 130
0
10
20
30
40
50
= 180
o
Tcase( C)
I
(A)
T(RMS)
Fig.3:
RMSon-statecurrentversuscasetempera-
ture.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt
Tj( C)
o
Ih
-40
-20
0
20
40
60
80
100
120 140
Igt[Tj]
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 C]
Fig.5:
Relativevariationof gatetriggercurrent and
holdingcurrent versus junction temperature.
0
20
40
60
80
100
120
140
0
10
20
30
40
50
60
-75
-85
-95
-105
-115
-125
P (W)
Tamb ( C)
Rth = 0 C/W
0.5 C/W
1 C/W
1.5 C/W
Tcase ( C)
o
Fig.2 :
Correlationbetweenmaximum RMS power
dissipation and maximum allowable temperature
(Tamb andTcase)fordifferentthermalresistances
heatsink+ contact.
tp(s)
1E-3
1E-2
1E-1
1E+0
1E+1
0.01
0.1
1
Zth(j-c)/Rth(j-c)
Fig.4 :
Relative variation of thermal impedance
junctionto caseversus pulseduration.
1
10
100
1000
0
50
100
150
200
250
300
Tj initial = 25 C
Number of cycles
I
(A)
TSM
Fig.6 :
Non repetitivesurge peak on-state current
versusnumber of cycles.
T40xxxKS
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